Mechanism of stress relaxation in (0001) InGaN/GaN via formation of V-shaped dislocation half-loops
Year(s):
2013
Autors:
Lobanova A.V. , d.o.p.a.m.s. Anna L. Kolesnikova , Romanov A.E. , Karpov S.Yu. , Rudinsky M.E. , Yakovlev E.V. ,
Name Publication:
Applied Physics Letters
Volume Publication:
103
Issue Publication:
15 / 152106