Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique
Year(s):
2013
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Vcherashnii D.B. , Obukhov S.A. , Feoktistov N.A. ,
Name Publication:
Technical Physics Letters
Volume Publication:
39
Issue Publication:
5
Pages:
488 - 491