Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate
Year(s):
2013
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. ,
Name Publication:
Technical Physics Letters
Volume Publication:
39
Issue Publication:
3
Pages:
274 - 276