Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su
Year(s):
2019
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Timoshnev S.N. , Bouravlev A.D. , Sobolev M.S. ,
Name Publication:
Semiconductors
Volume Publication:
53
Issue Publication:
2
Pages:
180 - 187