Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut
Year(s):
2019
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F. ,
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
4
Pages:
X1