MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In
Year(s):
2018
Autors:
Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E. ,
Name Publication:
Semiconductors
Volume Publication:
52
Issue Publication:
5
Pages:
651 - 653