The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at
Year(s):
2018
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F. ,
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
9
Pages:
P480 - P486