Growth of sic films by the method of substitution of atoms on porous si (100) and (111) substrates
Year(s):
2018
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F. ,
Name Publication:
Materials Physics and Mechanics
Volume Publication:
36
Issue Publication:
1
Pages:
39 - 52