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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
  2. Research Activity
  3. GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

Year(s):
2017
Autors:
c.o.p.a.m.s. Sharofidinov Sh.Sh. , c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A. ,
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032028
DOI:
https://doi.org/10.1088/1742-6596/917/3/032028
Web address:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85036474297&doi=10.1088%2f1742-6596%2f917%2f3%2f032028&partnerID=40&md5=c49ff757a81a01934aded1988f4fcd6e
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