Effect of SiC buffer layer on GaN growth on Si via PA-MBE
Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Telyatnik R.S. , Timoshnev S.N. ,
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032038