Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitutio
Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I. ,
Name Publication:
Superlattices and Microstructures
Volume Publication:
111
Pages:
899 - 911