Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitut
Year(s):
2017
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A. ,
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
872
Issue Publication:
1 / 012030