Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution
Year(s):
2017
Autors:
c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , Kalinina E.V. , d.o.p.a.m.s. Kukushkin S.A. ,
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
5
Pages:
621 - 627