X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the
Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I. ,
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
5
Pages:
1014 - 1026