Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide
Year(s):
2017
Autors:
Egorov V.K. , Egorov E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. ,
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
4
Pages:
773 - 779