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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
  2. Research Activity
  3. Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. ,
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
3
Pages:
396 - 401
DOI:
https://doi.org/10.1134/S1063782617030149
Web address:
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85015634212&doi=10.1134%2fS1063782617030149&partnerID=40&md5=6b9170b64d4e966de2be68b444818921
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