Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst
Year(s):
2017
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. ,
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
52
Issue Publication:
1-2
Pages:
29 - 42