An ISO 7/ISO 8 class clean room complies with Russian standards and provides a strictly controlled environment with minimal pollution particles in the air.
This is critically important for the production of semiconductor structures, where even microscopic contamination can affect significantly the quality and characteristics of the final product. The new high-tech facility is equipped with two specialized installations for the synthesis of silicon carbide on silicon, specially designed to implement a new method of coordinated atomic substitution. The method was discovered, experimentally confirmed and patented in the laboratory of Structural and Phase Transformations in Condensed Media under the supervision of Professor Sergey Arsenyevich Kukushkin, the IPMash RAS chief researcher.

The installed equipment makes it possible to grow high-quality layers of cubic silicon carbide (3C—SiC) on silicon substrates, a material that is a key component for creating modern semiconductor devices.
The work is supported by the Russian Science Foundation – the project 23-91-01001 «Development of special cubic silicon carbide substrates on silicon (3C-SiC/Si) for the growth of Ga(Al)N transistor heterostructures with high mobility of charge carriers (HEMT)»