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A clean room for the growth of 3C-SiC/Si substrates for transistor heterostructures has been created at IPMash RAS

On June 19, the Laboratory of Structural and Phase Transformations in Condensed Media hosted the grand opening of the clean room of ISO 7/ISO 8 class

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Scientists have explained the mechanism of formation of materials for a new generation of optoelectronic devices

The physicists of IPMash RAS, SPSU, HSE and St.PAU have studied the mechanism of formation of three-dimensional structures on a promising semiconductor indium-galium-nitride alloy

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Перспективы отечественных полупроводников.

Перспективные разработки и потенциал полупроводников на основе «карбида кремния» в технологиях, предложенные доктором физико-технических наук Кукушкиным Сергеем Арсеньевичем.

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Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

A clean room for the growth of 3C-SiC/Si substrates for transistor heterostructures has been created at IPMash RAS

Scientists have explained the mechanism of formation of materials for a new generation of optoelectronic devices

Перспективы отечественных полупроводников.

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