Search by the «гетероструктуры нитрида галия» tag News IPMash RAS scientists developed an automated complex for synthesis of thin films A unique reactor appeared at IPMash RAS, designed specially for the industrial growth of SiC on Si by the method of coordinated atomic substitution 401 IPMash RAS scientists have created a mock-up of substrates for the production of new generation Russian transistors IPMash RAS scientists received an RSF grant on a topic proposed by Epiel JSC. The grant is aimed at developing a technology for creating a new type of substrate for the future production of heterostructures of galium nitride 1776
