IPMash RAS scientists developed an automated complex for synthesis of thin films
On February 27, 2025, IPMash RAS tested successfully a new facility with a unique reactor designed for the synthesis of new wide-band semiconductor heterogeneous structures based on silicon carbide films on silicon. This will allow the production of pilot batches of special cubic silicon carbide substrates on silicon for the growth of GaN transient structures up to and including 150 mm in diameter.
The installation was created in the laboratory of Structural and Phase Transformations within the framework of the Russian Science Foundation grant «Development of special substrates of cubic silicon carbide on silicon (3C-SiC/Si) for the growth of Ga(Al)N transistor heterostructures with high mobility of charge carriers (HEMT)».
Vladimir Anatolyevich Polyansky, Director of IPMashRAS,Doctorof Technical Sciences, and Sergey Arsenyevich Kukushkin, Head of the Laboratory,Doctor of Physico-Mathematical Sciences.
Laboratorystaff(from left to right):Senior Researcher,PhD Alexander Sergeevich Graschenko;Senior Engineer Sergey Vladimirovich Razumov;Head of the Laboratory, PhD Sergey Arsenyevich Kukushkin;Internresearcher,PhD student Maxim Gennadievich Vorobyov;Senior Researcher, PhD Alexey Redkov Viktorovich; Chief Researcher, Doctor of Physico-mathematical Sciences Andrey Viktorovich Osipov
Tatyana Vasilyevna Lavrova-Lead Engineer