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IPMash RAS scientists proposed a new principle for the digital development of materials technology for microelectronics

IPMash RAS specialists developed and tested successfully a new approach to modeling crystal growth, which is able to predict crystal properties

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St. Petersburg TV channels told about the unique development of IPMash RAS scientists

Saint Petersburg and LenTV24 TV channels told about the new material grown by the staff of the laboratory Structural and Phase Transformations in Condensed Media, headed by S.A. Kukushkin

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Перспективы отечественных полупроводников.

Перспективные разработки и потенциал полупроводников на основе «карбида кремния» в технологиях, предложенные доктором физико-технических наук Кукушкиным Сергеем Арсеньевичем.

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Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

IPMash RAS scientists proposed a new principle for the digital development of materials technology for microelectronics

St. Petersburg TV channels told about the unique development of IPMash RAS scientists

Перспективы отечественных полупроводников.

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