Telyatnik R.S. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Rozhavskaya M.M. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Myasoedov A.V. , Troshkov S.I. , Sorokin L.M. , Brunkov P.N. , Baklanov A.V. , Telyatnik R.S. , Juluri R.R. , Pedersen K. , Popok V.N.

Name Publication:

Physica Status Solidi (A) Applications and Materials Science

Volume Publication:

214

Issue Publication:

10 / 1700190

DOI:

https://doi.org/10.1002/pssa.201700190

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Telyatnik R.S. , Timoshnev S.N.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032038

DOI:

https://doi.org/10.1088/1742-6596/917/3/032038

Finite element modeling of nanoindentation and scratching of Si, SiC, Ge crystals with anisotropic p

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S.

Name Publication:

IOP Conference Series: Materials Science and Engineering

Volume Publication:

387

Issue Publication:

1 / 012078

DOI:

https://doi.org/10.1088/1757-899X/387/1/012078

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

1

Pages:

162 - 172

DOI:

https://doi.org/10.1134/S106378341501031X

Numerical approximations of green's functions for elastic anisotropic media by spherical harmonics,

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

27

Issue Publication:

1

Pages:

98 - 107

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

1

Pages:

1 - 16

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V., M.M. Rozhavskaya, A.V. Myasoedov, S.I. Troshkov, L.M. Sorokin, P.N.Brunkov, A.V. Baklanov, R.R. Juluri, K.B. Pedersen, V.N. Popok

Name Publication:

Phys. Status Solidi A

Issue Publication:

214(10)

DOI:

https://doi.org/10.1002/pssa.201700190

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

ГРАНТЫ РНФ

Number:

№14-12-01102

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Telyatnik R.S. - Researcher - Structural and Phase Transitions in Condensed Matter

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

Finite element modeling of nanoindentation and scratching of Si, SiC, Ge crystals with anisotropic p

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

Numerical approximations of green's functions for elastic anisotropic media by spherical harmonics,

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

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