Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Perturbation theory in the kinetics of first-order phase transitions

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Chemical Physics

Volume Publication:

107

Issue Publication:

8

Pages:

3247 - 3252

DOI:

https://doi.org/10.1063/1.474675

Dynamics and control of thin film growth process from a multicomponent gas

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.t.s. Alexander Fradkov , Guzenko P.Yu. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics D: Applied Physics

Volume Publication:

30

Issue Publication:

20

Pages:

2794 - 2797

DOI:

https://doi.org/10.1088/0022-3727/30/20/004

Kinetics of first-order phase transitions in the asymptotic stage

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Experimental and Theoretical Physics

Volume Publication:

86

Issue Publication:

6

Pages:

1201 - 1208

DOI:

https://doi.org/10.1134/1.558591

Kinetics of the initial stage of first-order phase transitions

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Detzik V.N. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kaptelov E.Yu. , Pronin I.P.

Name Publication:

Journal of Crystal Growth

Volume Publication:

187

Issue Publication:

3-4

Pages:

474 - 480

DOI:

https://doi.org/10.1016/S0022-0248(97)00594-0

Thin-film condensation processes

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics-Uspekhi

Volume Publication:

41

Issue Publication:

10

Pages:

983 - 1014

DOI:

https://doi.org/10.1070/PU1998v041n10ABEH000461

Kinetics of surface nucleation accompanied by associative desorption

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kandakov A.V. , Mamedov G. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Inorganic Materials

Volume Publication:

35

Issue Publication:

6

Pages:

596 - 598

Evolution of phase composition and associated properties in the process of growth of thin films

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Applied Physics

Volume Publication:

86

Issue Publication:

3

Pages:

1370 - 1376

DOI:

https://doi.org/10.1063/1.370896

Critical current in high-temperature superconductors with disordered tilt grain boundaries

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Ovid'ko I.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

26

Issue Publication:

7

Pages:

609 - 611

DOI:

https://doi.org/10.1134/1.1262928

Theory of first-order phase transitions near the vapor-liquid-solid triple point

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Inorganic Materials

Volume Publication:

35

Issue Publication:

6

Pages:

551 - 558

Mechanisms and kinetics of the early stages in Y-Ba-Cu-O film growth

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Gol'man E.K. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Gol'drin V.I. , Plotkin D.A. , Razumov S.V.

Name Publication:

Inorganic Materials

Volume Publication:

35

Issue Publication:

9

Pages:

925 - 929

Self-organization in the formation of a nanoporous carbon material

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Gordeev S.K. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Yu. V. Pavlov

Name Publication:

Physics of the Solid State

Volume Publication:

42

Issue Publication:

12

Pages:

2314 - 2317

DOI:

https://doi.org/10.1134/1.1332156

Thermodynamics and kinetics of the initial stages of polarization switching in ferroelectrics

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

43

Issue Publication:

1

Pages:

82 - 89

DOI:

https://doi.org/10.1134/1.1340192

Polarization switching kinetics in ferroelectrics

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

43

Issue Publication:

1

Pages:

90 - 97

DOI:

https://doi.org/10.1134/1.1340193

Polarization switching kinetics in ferroelectrics in the region of strong metastability

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

43

Issue Publication:

2

Pages:

325 - 328

DOI:

https://doi.org/10.1134/1.1349483

Nucleation of III nitride semiconductors in heteroepitaxy

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Bessolov V.N. , d.o.p.a.m.s. Osipov A.V. , Luk'yanov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

43

Issue Publication:

12

Pages:

2229 - 2233

DOI:

https://doi.org/10.1134/1.1427946

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Perturbation theory in the kinetics of first-order phase transitions

Dynamics and control of thin film growth process from a multicomponent gas

Kinetics of first-order phase transitions in the asymptotic stage

Kinetics of the initial stage of first-order phase transitions

Thin-film condensation processes

Kinetics of surface nucleation accompanied by associative desorption

Evolution of phase composition and associated properties in the process of growth of thin films

Critical current in high-temperature superconductors with disordered tilt grain boundaries

Theory of first-order phase transitions near the vapor-liquid-solid triple point

Mechanisms and kinetics of the early stages in Y-Ba-Cu-O film growth

Self-organization in the formation of a nanoporous carbon material

Thermodynamics and kinetics of the initial stages of polarization switching in ferroelectrics

Polarization switching kinetics in ferroelectrics

Polarization switching kinetics in ferroelectrics in the region of strong metastability

Nucleation of III nitride semiconductors in heteroepitaxy

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