![Osipov A.V. Osipov A.V.](/upload/000/u40/6/b/0118acef.jpg)
Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
1
Pages:
77 - 83
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
2
Pages:
157 - 161
Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Talalaev V.G. , Tomm J.W. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shtrom I.V. , Kotlyar K.P. , Mahler F. , Schilling J. , Reznik R.R. , Cirlin G.E.
Name Publication:
Nanotechnology
Volume Publication:
31
Issue Publication:
29 / 294003
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
6
Pages:
539 - 542
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
CrystEngComm
Volume Publication:
22
Issue Publication:
32
Pages:
5280 - 5288
Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Gorlyak A.N. , Lebedev A.O. , Luchinin V.V. , Markov A.V. , Panov M.F. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
8
Pages:
763 - 766
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
10
Pages:
1012 - 1015
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1103 - 1106
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Crystal Growth
Volume Publication:
548
Issue Publication:
/ 125845
Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I. , Kasatkin I.A. , Loshachenko A.S.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1049 - 1052
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1695
Issue Publication:
1 / 012005
Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Materials
Volume Publication:
14
Issue Publication:
1 / 78
Pages:
1 - 12
Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Catalysis Today
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Khromov V.S. , Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bagraev N.T. , Klyachkin L.E. , Malyarenko A.M.
Name Publication:
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume Publication:
2021-August
The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Koryakin A.A. , Eremeev Y.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Technical Physics Letters
Volume Publication:
47
Issue Publication:
2
Pages:
126 - 129