Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

55

Issue Publication:

1

Pages:

77 - 83

DOI:

https://doi.org/10.3103/S0025654420010136

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

55

Issue Publication:

2

Pages:

157 - 161

DOI:

https://doi.org/10.3103/S0025654420020107

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Talalaev V.G. , Tomm J.W. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shtrom I.V. , Kotlyar K.P. , Mahler F. , Schilling J. , Reznik R.R. , Cirlin G.E.

Name Publication:

Nanotechnology

Volume Publication:

31

Issue Publication:

29 / 294003

DOI:

https://doi.org/10.1088/1361-6528/ab83b6

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

6

Pages:

539 - 542

DOI:

https://doi.org/10.1134/S106378502006005X

Growth of faceted pores in a multi-component crystal by applying mechanical stress

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

CrystEngComm

Volume Publication:

22

Issue Publication:

32

Pages:

5280 - 5288

DOI:

https://doi.org/10.1039/d0ce00888e

Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Gorlyak A.N. , Lebedev A.O. , Luchinin V.V. , Markov A.V. , Panov M.F. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

8

Pages:

763 - 766

DOI:

https://doi.org/10.1134/S106378502008012X

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

10

Pages:

1012 - 1015

DOI:

https://doi.org/10.1134/S1063785020100235

The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

11

Pages:

1103 - 1106

DOI:

https://doi.org/10.1134/S1063785020110243

Spiral growth of a multicomponent crystal from vapor of its components

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Crystal Growth

Volume Publication:

548

Issue Publication:

/ 125845

DOI:

https://doi.org/10.1016/j.jcrysgro.2020.125845

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I. , Kasatkin I.A. , Loshachenko A.S.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

11

Pages:

1049 - 1052

DOI:

https://doi.org/10.1134/S1063785020110085

A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1695

Issue Publication:

1 / 012005

DOI:

https://doi.org/10.1088/1742-6596/1695/1/012005

Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials

Volume Publication:

14

Issue Publication:

1 / 78

Pages:

1 - 12

DOI:

https://doi.org/10.3390/ma14010078

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Catalysis Today

DOI:

https://doi.org/10.1016/j.cattod.2021.08.012

Electrical detection of terahertz radiation by silicon carbide nanostructure

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Khromov V.S. , Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bagraev N.T. , Klyachkin L.E. , Malyarenko A.M.

Name Publication:

International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

Volume Publication:

2021-August

DOI:

https://doi.org/10.1109/IRMMW-THz50926.2021.9567540

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , Eremeev Y.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

47

Issue Publication:

2

Pages:

126 - 129

DOI:

https://doi.org/10.1134/S1063785021020085

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transitions in Condensed Matter

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

Growth of faceted pores in a multi-component crystal by applying mechanical stress

Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)

Spiral growth of a multicomponent crystal from vapor of its components

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon

Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

Electrical detection of terahertz radiation by silicon carbide nanostructure

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

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