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Call Stack
#TimeMemoryFunctionLocation
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 Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )
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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
  2. Employees
  3. Osipov A.V.
Osipov A.V.

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

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Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
1
Pages:
77 - 83
DOI:
https://doi.org/10.3103/S0025654420010136
Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
2
Pages:
157 - 161
DOI:
https://doi.org/10.3103/S0025654420020107
Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Talalaev V.G. , Tomm J.W. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shtrom I.V. , Kotlyar K.P. , Mahler F. , Schilling J. , Reznik R.R. , Cirlin G.E.
Name Publication:
Nanotechnology
Volume Publication:
31
Issue Publication:
29 / 294003
DOI:
https://doi.org/10.1088/1361-6528/ab83b6
Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
6
Pages:
539 - 542
DOI:
https://doi.org/10.1134/S106378502006005X
Growth of faceted pores in a multi-component crystal by applying mechanical stress
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
CrystEngComm
Volume Publication:
22
Issue Publication:
32
Pages:
5280 - 5288
DOI:
https://doi.org/10.1039/d0ce00888e
Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Gorlyak A.N. , Lebedev A.O. , Luchinin V.V. , Markov A.V. , Panov M.F. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
8
Pages:
763 - 766
DOI:
https://doi.org/10.1134/S106378502008012X
Coating of a Nanostructured Profiled Si Surface with a SiC Layer
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
10
Pages:
1012 - 1015
DOI:
https://doi.org/10.1134/S1063785020100235
The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1103 - 1106
DOI:
https://doi.org/10.1134/S1063785020110243
Spiral growth of a multicomponent crystal from vapor of its components
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Journal of Crystal Growth
Volume Publication:
548
Issue Publication:
/ 125845
DOI:
https://doi.org/10.1016/j.jcrysgro.2020.125845
Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I. , Kasatkin I.A. , Loshachenko A.S.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1049 - 1052
DOI:
https://doi.org/10.1134/S1063785020110085
A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1695
Issue Publication:
1 / 012005
DOI:
https://doi.org/10.1088/1742-6596/1695/1/012005
Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Materials
Volume Publication:
14
Issue Publication:
1 / 78
Pages:
1 - 12
DOI:
https://doi.org/10.3390/ma14010078
Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.
Name Publication:
Catalysis Today
DOI:
https://doi.org/10.1016/j.cattod.2021.08.012
Electrical detection of terahertz radiation by silicon carbide nanostructure
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Khromov V.S. , Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bagraev N.T. , Klyachkin L.E. , Malyarenko A.M.
Name Publication:
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
Volume Publication:
2021-August
DOI:
https://doi.org/10.1109/IRMMW-THz50926.2021.9567540
The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Koryakin A.A. , Eremeev Y.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Technical Physics Letters
Volume Publication:
47
Issue Publication:
2
Pages:
126 - 129
DOI:
https://doi.org/10.1134/S1063785021020085
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