Grashchenko A.S. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

7

Pages:

711 - 713

DOI:

https://doi.org/10.1134/S1063785019070277

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012003

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012244

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012244

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

12

Pages:

1114 - 1116

DOI:

https://doi.org/10.1134/S1063785014120268

Microhardness study of two-layer nanostructures by a nanoindentation method

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

24

Issue Publication:

1

Pages:

35 - 40

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , c.o.p.a.m.s. Grashchenko A.S. , Konenkova E.V. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Rodin S.N. , Rubets V.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

10

Pages:

1966 - 1971

DOI:

https://doi.org/10.1134/S1063783415100042

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Guzilova L.I. , c.o.p.a.m.s. Grashchenko A.S. , Pechnikov A.I. , Maslov V.N. , Zav'Yalov D.V. , Abdrachmanov V.L. , Romanov A.E. , Nikolaev V.I.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

2

Pages:

166 - 171

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

ГРАНТЫ РНФ

Number:

№14-12-01102

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Grashchenko A.S. - Senior Researcher - Structural and Phase Transformations in Condensed Matter

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

Microhardness study of two-layer nanostructures by a nanoindentation method

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

Study of β-Ga2O3 epitaxial layers and single crystals by nanoindentation technique

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

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