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 Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )
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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
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  3. Kukushkin S.A.
Kukushkin S.A.

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

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MATERIALS OF THE INTERNATIONAL CONFERENCE “MECHANISMS AND NON-LINEAR PROBLEMS OF NUCLEATION AND GROW
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
1
Pages:
1 - 5
DOI:
https://doi.org/10.3103/S0025654420010148
Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
1
Pages:
77 - 83
DOI:
https://doi.org/10.3103/S0025654420010136
Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Mechanics of Solids
Volume Publication:
55
Issue Publication:
2
Pages:
157 - 161
DOI:
https://doi.org/10.3103/S0025654420020107
Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Seredin P.V. , Goloshchapov D.L. , Zolotukhin D.S. , Lenshin A.S. , Mizerov A.M. , Timoshnev S.N. , Nikitina E.V. , Arsentiev I.N. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Semiconductors
Volume Publication:
54
Issue Publication:
4
Pages:
417 - 425
DOI:
https://doi.org/10.1134/S1063782620040168
Development of Burton-Cabrera-Frank Theory for the Growth of a Non-Kossel Crystal via Chemical React
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Crystal Growth and Design
Volume Publication:
20
Issue Publication:
4
Pages:
2590 - 2601
DOI:
https://doi.org/10.1021/acs.cgd.9b01721
Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Talalaev V.G. , Tomm J.W. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shtrom I.V. , Kotlyar K.P. , Mahler F. , Schilling J. , Reznik R.R. , Cirlin G.E.
Name Publication:
Nanotechnology
Volume Publication:
31
Issue Publication:
29 / 294003
DOI:
https://doi.org/10.1088/1361-6528/ab83b6
Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Seredin P.V. , Goloshchapov D.L. , Zolotukhin D.S. , Lenshin A.S. , Khudyakov Y.Y. , Mizerov A.M. , Timoshnev S.N. , Arsentyev I.N. , Beltyukov A.N. , Leiste H. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Semiconductors
Volume Publication:
54
Issue Publication:
5
Pages:
596 - 608
DOI:
https://doi.org/10.1134/S1063782620050115
Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
6
Pages:
539 - 542
DOI:
https://doi.org/10.1134/S106378502006005X
MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Khrebtov A.I. , d.o.p.a.m.s. Kukushkin S.A. , Kryzhanovskaya N.V. , Cirlin G.E.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1537
Issue Publication:
1 / 012003
DOI:
https://doi.org/10.1088/1742-6596/1537/1/012003
Growth of faceted pores in a multi-component crystal by applying mechanical stress
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
CrystEngComm
Volume Publication:
22
Issue Publication:
32
Pages:
5280 - 5288
DOI:
https://doi.org/10.1039/d0ce00888e
Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Gorlyak A.N. , Lebedev A.O. , Luchinin V.V. , Markov A.V. , Panov M.F. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
8
Pages:
763 - 766
DOI:
https://doi.org/10.1134/S106378502008012X
Coating of a Nanostructured Profiled Si Surface with a SiC Layer
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
10
Pages:
1012 - 1015
DOI:
https://doi.org/10.1134/S1063785020100235
The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1103 - 1106
DOI:
https://doi.org/10.1134/S1063785020110243
Spiral growth of a multicomponent crystal from vapor of its components
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Journal of Crystal Growth
Volume Publication:
548
Issue Publication:
/ 125845
DOI:
https://doi.org/10.1016/j.jcrysgro.2020.125845
Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I. , Kasatkin I.A. , Loshachenko A.S.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
11
Pages:
1049 - 1052
DOI:
https://doi.org/10.1134/S1063785020110085
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