Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

MATERIALS OF THE INTERNATIONAL CONFERENCE “MECHANISMS AND NON-LINEAR PROBLEMS OF NUCLEATION AND GROW

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Mechanics of Solids

Volume Publication:

55

Issue Publication:

1

Pages:

1 - 5

DOI:

https://doi.org/10.3103/S0025654420010148

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

55

Issue Publication:

1

Pages:

77 - 83

DOI:

https://doi.org/10.3103/S0025654420010136

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

55

Issue Publication:

2

Pages:

157 - 161

DOI:

https://doi.org/10.3103/S0025654420020107

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Seredin P.V. , Goloshchapov D.L. , Zolotukhin D.S. , Lenshin A.S. , Mizerov A.M. , Timoshnev S.N. , Nikitina E.V. , Arsentiev I.N. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Semiconductors

Volume Publication:

54

Issue Publication:

4

Pages:

417 - 425

DOI:

https://doi.org/10.1134/S1063782620040168

Development of Burton-Cabrera-Frank Theory for the Growth of a Non-Kossel Crystal via Chemical React

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Crystal Growth and Design

Volume Publication:

20

Issue Publication:

4

Pages:

2590 - 2601

DOI:

https://doi.org/10.1021/acs.cgd.9b01721

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Talalaev V.G. , Tomm J.W. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shtrom I.V. , Kotlyar K.P. , Mahler F. , Schilling J. , Reznik R.R. , Cirlin G.E.

Name Publication:

Nanotechnology

Volume Publication:

31

Issue Publication:

29 / 294003

DOI:

https://doi.org/10.1088/1361-6528/ab83b6

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Seredin P.V. , Goloshchapov D.L. , Zolotukhin D.S. , Lenshin A.S. , Khudyakov Y.Y. , Mizerov A.M. , Timoshnev S.N. , Arsentyev I.N. , Beltyukov A.N. , Leiste H. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Semiconductors

Volume Publication:

54

Issue Publication:

5

Pages:

596 - 608

DOI:

https://doi.org/10.1134/S1063782620050115

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

6

Pages:

539 - 542

DOI:

https://doi.org/10.1134/S106378502006005X

MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Khrebtov A.I. , d.o.p.a.m.s. Kukushkin S.A. , Kryzhanovskaya N.V. , Cirlin G.E.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1537

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/1537/1/012003

Growth of faceted pores in a multi-component crystal by applying mechanical stress

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

CrystEngComm

Volume Publication:

22

Issue Publication:

32

Pages:

5280 - 5288

DOI:

https://doi.org/10.1039/d0ce00888e

Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Gorlyak A.N. , Lebedev A.O. , Luchinin V.V. , Markov A.V. , Panov M.F. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

8

Pages:

763 - 766

DOI:

https://doi.org/10.1134/S106378502008012X

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

10

Pages:

1012 - 1015

DOI:

https://doi.org/10.1134/S1063785020100235

The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

11

Pages:

1103 - 1106

DOI:

https://doi.org/10.1134/S1063785020110243

Spiral growth of a multicomponent crystal from vapor of its components

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Crystal Growth

Volume Publication:

548

Issue Publication:

/ 125845

DOI:

https://doi.org/10.1016/j.jcrysgro.2020.125845

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I. , Kasatkin I.A. , Loshachenko A.S.

Name Publication:

Technical Physics Letters

Volume Publication:

46

Issue Publication:

11

Pages:

1049 - 1052

DOI:

https://doi.org/10.1134/S1063785020110085

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

MATERIALS OF THE INTERNATIONAL CONFERENCE “MECHANISMS AND NON-LINEAR PROBLEMS OF NUCLEATION AND GROW

Vacancy Growth of a Faceted Pore in a Crystal via Chernov Mechanism

Elastic Properties of GaN and AlN Films Formed on SiC/Si Hybrid Substrate, a Porous Basis

Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures

Development of Burton-Cabrera-Frank Theory for the Growth of a Non-Kossel Crystal via Chemical React

Ascending Si diffusion into growing GaN nanowires from the SiC/Si substrate: Up to the solubility li

Influence of a Nanoporous Silicon Layer on the Practical Implementation and Specific Features of the

Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates

MBE synthesis and properties of GaN NWs on SiC/Si substrate and InGaN nanostructures on Si substrate

Growth of faceted pores in a multi-component crystal by applying mechanical stress

Investigation of the Hardness and Young’s Modulus in Thin Near-Surface Layers of Silicon Carbide fro

Coating of a Nanostructured Profiled Si Surface with a SiC Layer

The Optical Properties, Energy Band Structure, and Interfacial Conductance of a 3C-SiC(111)/Si(111)

Spiral growth of a multicomponent crystal from vapor of its components

Low-Temperature Growth of the CdS Cubic Phase by Atomic-Layer Deposition on SiC/Si Hybrid Substrates

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