Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1695

Issue Publication:

1 / 012005

DOI:

https://doi.org/10.1088/1742-6596/1695/1/012005

Nucleation of nano-islands of pure components during growth of a multicomponent crystal via step-flo

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1695

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/1695/1/012003

Drastic change in surface electronic properties and creation of a new carbon-based nanostructure on

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Timoshnev S.N. , Benemanskaya G.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1697

Issue Publication:

1 / 012247

DOI:

https://doi.org/10.1088/1742-6596/1697/1/012247

Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials

Volume Publication:

14

Issue Publication:

1 / 78

Pages:

1 - 12

DOI:

https://doi.org/10.3390/ma14010078

Dielectric and polar properties of aluminum nitride single crystals

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kazarova O.P. , Mohov E.N. , Yu. Kaptelov E. , Pronin I.P.

Name Publication:

Ferroelectrics

Volume Publication:

576

Issue Publication:

1

Pages:

55 - 61

DOI:

https://doi.org/10.1080/00150193.2021.1888260

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Catalysis Today

DOI:

https://doi.org/10.1016/j.cattod.2021.08.012

Special issue: Silicon carbide: From fundamentals to applications

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials

Volume Publication:

14

Issue Publication:

5 / 1081

Pages:

1 - 4

DOI:

https://doi.org/10.3390/ma14051081

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , Eremeev Y.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

47

Issue Publication:

2

Pages:

126 - 129

DOI:

https://doi.org/10.1134/S1063785021020085

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Cry

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bagraev N.T. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanov V.V. , Klyachkin L.E. , Malyarenko A.M. , Khromov V.S.

Name Publication:

Semiconductors

Volume Publication:

55

Issue Publication:

2

Pages:

137 - 145

DOI:

https://doi.org/10.1134/S106378262102007X

Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Kandakov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Kotlyar K.P. , Ubyivovk E.V.

Name Publication:

Physics of the Solid State

Volume Publication:

63

Issue Publication:

3

Pages:

442 - 448

DOI:

https://doi.org/10.1134/S1063783421030100

Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Solnyshkin A.V. , Sergeeva O.N. , Shustova O.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Staritsyn M.V. , Kaptelov E.Y. , d.o.p.a.m.s. Kukushkin S.A. , Pronin I.P.

Name Publication:

Technical Physics Letters

Volume Publication:

47

Issue Publication:

6

Pages:

466 - 469

DOI:

https://doi.org/10.1134/S1063785021050138

Self-Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self-Catalyzed G

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physica Status Solidi (B) Basic Research

Volume Publication:

258

Issue Publication:

6 / 2000604

DOI:

https://doi.org/10.1002/pssb.202000604

Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1954

Issue Publication:

1 / 012009

DOI:

https://doi.org/10.1088/1742-6596/1954/1/012009

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Crystal Growth and Design

Volume Publication:

21

Issue Publication:

9

Pages:

4914 - 4926

DOI:

https://doi.org/10.1021/acs.cgd.1c00349

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Surface and Coatings Technology

Volume Publication:

423

Issue Publication:

/ 127610

DOI:

https://doi.org/10.1016/j.surfcoat.2021.127610

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transitions in Condensed Matter

A new method for creating nanoprofiled epitaxial silicon carbide surfaces on silicon

Nucleation of nano-islands of pure components during growth of a multicomponent crystal via step-flo

Drastic change in surface electronic properties and creation of a new carbon-based nanostructure on

Anomalous properties of the dislocation-free interface between si(111) substrate and 3c-sic(111) epi

Dielectric and polar properties of aluminum nitride single crystals

Vacancy growth of monocrystalline SiC from Si by the method of self-consistent substitution of atoms

Special issue: Silicon carbide: From fundamentals to applications

The Influence of the Porosity of Silicon Layer on the Elastic Properties of Hybrid SiC/Si Substrates

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Cry

Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by

Self-Consistent Modeling of Nucleation and Growth of 2D Islands on the Top Facet of Self-Catalyzed G

Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

Dynamic Interaction of Steps and Nanoislands during Growth of a Multicomponent Crystal

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

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