Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Cherkashin N.A. , Sakharov A.V. , Nikolaev A.E. , Lundin V.V. , Usov S.O. , Ustinov V.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Tsatsul’nikov A.F.

Name Publication:

Technical Physics Letters

Volume Publication:

47

Issue Publication:

10

Pages:

753 - 756

DOI:

https://doi.org/10.1134/S106378502108006X

Spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitu

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials

Volume Publication:

14

Issue Publication:

19 / 5579

DOI:

https://doi.org/10.3390/ma14195579

Elastic properties of porous silicon layer of hybrid SiC/Si substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Eremeev I.A. , Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

2086

Issue Publication:

1 / 012006

DOI:

https://doi.org/10.1088/1742-6596/2086/1/012006

Method for the modification of graphite subsurface layer to a solid mixture of SiC and graphite

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

2086

Issue Publication:

1 / 012012

DOI:

https://doi.org/10.1088/1742-6596/2086/1/012012

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Inorganic Materials

Volume Publication:

57

Issue Publication:

13

Pages:

1319 - 1339

DOI:

https://doi.org/10.1134/S0020168521130021

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V. , Kalmykov A. , Konenkova E. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A. , Poletaev N. , Rodin S.

Name Publication:

Journal of Crystal Growth

Volume Publication:

457

Pages:

202 - 206

DOI:

https://doi.org/10.1016/j.jcrysgro.2016.05.025

Formation mechanisms and the orientation of selfpolarization in PZT polycristalline thin films

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Pronin I.P. , d.o.p.a.m.s. Kukushkin S.A. , Spirin V.V. , Senkevich S.V. , Kaptelov E.Y. , Dolgintsev D.M. , Pronin V.P. , Kiselev D.A. , Sergeeva O.N.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

30

Issue Publication:

1

Pages:

20 - 34

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical co

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

1

Pages:

28 - 33

DOI:

https://doi.org/10.1134/S1063783417010164

Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

32

Issue Publication:

3

Pages:

262 - 271

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) s

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

32

Issue Publication:

2

Pages:

108 - 116

DOI:

https://doi.org/10.18720/MPM.3222017-2

Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

52

Issue Publication:

1-2

Pages:

29 - 42

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

2

Pages:

399 - 402

DOI:

https://doi.org/10.1134/S1063783417020020

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Semiconductors

Volume Publication:

51

Issue Publication:

3

Pages:

396 - 401

DOI:

https://doi.org/10.1134/S1063782617030149

Nanoindentation of GaN/SiC thin films on silicon substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Journal of Physics and Chemistry of Solids

Volume Publication:

102

Pages:

151 - 156

DOI:

https://doi.org/10.1016/j.jpcs.2016.11.004

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Egorov V.K. , Egorov E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

4

Pages:

773 - 779

DOI:

https://doi.org/10.1134/S1063783417040072

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transitions in Condensed Matter

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitu

Elastic properties of porous silicon layer of hybrid SiC/Si substrates

Method for the modification of graphite subsurface layer to a solid mixture of SiC and graphite

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Semipolar AlN and GaN on Si(100): HVPE technology and layer properties

Formation mechanisms and the orientation of selfpolarization in PZT polycristalline thin films

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical co

Nucleation and growth mechanisms of CdTe thin films on silicon substrates with silicon carbide buffe

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) s

Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

Nanoindentation of GaN/SiC thin films on silicon substrate

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

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