Osipov A.V. · Scientific work · Scientific publications — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

9

Pages:

1891 - 1896

DOI:

https://doi.org/10.1134/S1063783418090184

Structural and elastoplastic properties of β - Ga 2O 3 films grown on hybrid SiC/Si substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , c.o.p.a.m.s. Dr. Elena Osipova , Pechnikov A.I. , Soshnikov I.P.

Name Publication:

Continuum Mechanics and Thermodynamics

Volume Publication:

30

Issue Publication:

5

Pages:

1059 - 1068

DOI:

https://doi.org/10.1007/s00161-018-0662-6

MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Proceedings - International Conference Laser Optics 2018, ICLO 2018

Issue Publication:

/ 8435191

Pages:

382

DOI:

https://doi.org/10.1109/LO.2018.8435191

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

10

Pages:

2066 - 2071

DOI:

https://doi.org/10.1134/S1063783418100116

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

53

Issue Publication:

5

Pages:

481 - 488

DOI:

https://doi.org/10.3103/S0025654418080010

Carbon-based aromatic-like nanostructures on the vicinal SiC surfaces induced by BA adsorption

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

8

Issue Publication:

6

Pages:

M53 - M59

DOI:

https://doi.org/10.1149/2.0031906jss

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

8

Issue Publication:

4

Pages:

X1

DOI:

https://doi.org/10.1149/2.0011906jss

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova

Name Publication:

Materials Physics and Mechanics

Volume Publication:

42

Issue Publication:

2

Pages:

178 - 182

DOI:

https://doi.org/10.18720/MPM.4222019_3

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Senkevich S.V. , Pronin I.P.

Name Publication:

Ferroelectrics

Volume Publication:

544

Issue Publication:

1

Pages:

33 - 37

DOI:

https://doi.org/10.1080/00150193.2019.1598181

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kasatkin I.A. , Mikhailovskii V.Y. , Romanychev A.I.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

42

Issue Publication:

1

Pages:

30 - 39

DOI:

https://doi.org/10.18720/MPM.4212019_4

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R. , Soshnikov I. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Talalaev V. , Cirlin G.

Name Publication:

AIP Conference Proceedings

Volume Publication:

2064

Issue Publication:

/ 040004

DOI:

https://doi.org/10.1063/1.5087683

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dement’ev P.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

3

Pages:

201 - 204

DOI:

https://doi.org/10.1134/S1063785019030039

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Meth

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kotlyar K.P. , Likhachev A.I. , Nashchekin A.V. , Soshnikov I.P.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

299 - 306

DOI:

https://doi.org/10.1134/S1063783419030272

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Ca

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

288 - 291

DOI:

https://doi.org/10.1134/S1063783419030181

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substit

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

456 - 463

DOI:

https://doi.org/10.1134/S1063783419030193

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic S

Structural and elastoplastic properties of β - Ga 2O 3 films grown on hybrid SiC/Si substrates

MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

Carbon-based aromatic-like nanostructures on the vicinal SiC surfaces induced by BA adsorption

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Meth

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Ca

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substit

Contacts