Osipov A.V. · Scientific work · Scientific publications — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Telyatnik R.S. , Timoshnev S.N.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032038

DOI:

https://doi.org/10.1088/1742-6596/917/3/032038

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032014

DOI:

https://doi.org/10.1088/1742-6596/917/3/032014

MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Ilkiv I.V. , Khrebtov A.I. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Advances in Condensed Matter Physics

Volume Publication:

2018

Issue Publication:

/ 1040689

DOI:

https://doi.org/10.1155/2018/1040689

Heteroepitaxy growth of SiC on the substrates of Porous Si method of substitution of atoms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

Journal of Nano- and Electronic Physics

Volume Publication:

10

Issue Publication:

3 / 03026

DOI:

https://doi.org/10.21272/jnep.10(3).03026

Growth of sic films by the method of substitution of atoms on porous si (100) and (111) substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

36

Issue Publication:

1

Pages:

39 - 52

DOI:

https://doi.org/10.18720/MPM.3612018_4

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

7

Issue Publication:

4

Pages:

P158 - P160

DOI:

https://doi.org/10.1149/2.0061804jss

Spiral growth of a crystal due to chemical reaction

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1124

Issue Publication:

2 / 022006

DOI:

https://doi.org/10.1088/1742-6596/1124/2/022006

The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

7

Issue Publication:

9

Pages:

P480 - P486

DOI:

https://doi.org/10.1149/2.0191809jss

A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , Fedotov S.D. , Statsenko V.N. , Sokolov E.M. , Timoshenkov S.P.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

57

Issue Publication:

1

Pages:

82 - 96

DOI:

https://doi.org/10.1515/rams-2018-0050

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Timoshnev S.N.

Name Publication:

Thin Solid Films

Volume Publication:

646

Pages:

158 - 162

DOI:

https://doi.org/10.1016/j.tsf.2017.11.037

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rubets V.P.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

3

Pages:

504 - 509

DOI:

https://doi.org/10.1134/S1063783418030022

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Soshnikov I.P.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

5

Pages:

852 - 857

DOI:

https://doi.org/10.1134/S1063783418050104

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.

Name Publication:

Semiconductors

Volume Publication:

52

Issue Publication:

5

Pages:

651 - 653

DOI:

https://doi.org/10.1134/S1063782618050251

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kalinkin I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Semiconductors

Volume Publication:

52

Issue Publication:

6

Pages:

802 - 808

DOI:

https://doi.org/10.1134/S1063782618060118

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

IOP Conference Series: Materials Science and Engineering

Volume Publication:

387

Issue Publication:

1 / 012044

DOI:

https://doi.org/10.1088/1757-899X/387/1/012044

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

MBE Growth and Optical Properties of GaN, InN, and A3B5 Nanowires on SiC/Si(111) Hybrid Substrate

Heteroepitaxy growth of SiC on the substrates of Porous Si method of substitution of atoms

Growth of sic films by the method of substitution of atoms on porous si (100) and (111) substrates

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

Spiral growth of a crystal due to chemical reaction

The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at

A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

Study of the Anisotropic Elastoplastic Properties of β-Ga2O3 Films Synthesized on SiC/Si Substrates

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)

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