![Osipov A.V. Osipov A.V.](/upload/000/u40/6/b/0118acef.jpg)
Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Telyatnik R.S. , Timoshnev S.N.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032038
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032014
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Ilkiv I.V. , Khrebtov A.I. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.
Name Publication:
Advances in Condensed Matter Physics
Volume Publication:
2018
Issue Publication:
/ 1040689
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
Journal of Nano- and Electronic Physics
Volume Publication:
10
Issue Publication:
3 / 03026
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
36
Issue Publication:
1
Pages:
39 - 52
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
4
Pages:
P158 - P160
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1124
Issue Publication:
2 / 022006
The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
9
Pages:
P480 - P486
A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , Fedotov S.D. , Statsenko V.N. , Sokolov E.M. , Timoshenkov S.P.
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
57
Issue Publication:
1
Pages:
82 - 96
Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Timoshnev S.N.
Name Publication:
Thin Solid Films
Volume Publication:
646
Pages:
158 - 162
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rubets V.P.
Name Publication:
Physics of the Solid State
Volume Publication:
60
Issue Publication:
3
Pages:
504 - 509
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Soshnikov I.P.
Name Publication:
Physics of the Solid State
Volume Publication:
60
Issue Publication:
5
Pages:
852 - 857
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.
Name Publication:
Semiconductors
Volume Publication:
52
Issue Publication:
5
Pages:
651 - 653
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kalinkin I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Semiconductors
Volume Publication:
52
Issue Publication:
6
Pages:
802 - 808
Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
IOP Conference Series: Materials Science and Engineering
Volume Publication:
387
Issue Publication:
1 / 012044