Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.

Name Publication:

Semiconductors

Volume Publication:

52

Issue Publication:

5

Pages:

651 - 653

DOI:

https://doi.org/10.1134/S1063782618050251

MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) subs

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , Zeze D.A. , Cirlin G.E.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1038

Issue Publication:

1 / 012063

DOI:

https://doi.org/10.1088/1742-6596/1038/1/012063

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kalinkin I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Semiconductors

Volume Publication:

52

Issue Publication:

6

Pages:

802 - 808

DOI:

https://doi.org/10.1134/S1063782618060118

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

IOP Conference Series: Materials Science and Engineering

Volume Publication:

387

Issue Publication:

1 / 012044

DOI:

https://doi.org/10.1088/1757-899X/387/1/012044

Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

9

Pages:

1891 - 1896

DOI:

https://doi.org/10.1134/S1063783418090184

Structural and elastoplastic properties of β - Ga 2O 3 films grown on hybrid SiC/Si substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , c.o.p.a.m.s. Dr. Elena Osipova , Pechnikov A.I. , Soshnikov I.P.

Name Publication:

Continuum Mechanics and Thermodynamics

Volume Publication:

30

Issue Publication:

5

Pages:

1059 - 1068

DOI:

https://doi.org/10.1007/s00161-018-0662-6

MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Proceedings - International Conference Laser Optics 2018, ICLO 2018

Issue Publication:

/ 8435191

Pages:

382

DOI:

https://doi.org/10.1109/LO.2018.8435191

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

10

Pages:

2066 - 2071

DOI:

https://doi.org/10.1134/S1063783418100116

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

53

Issue Publication:

5

Pages:

481 - 488

DOI:

https://doi.org/10.3103/S0025654418080010

MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , Kirilenko D.A. , Cirlin G.E.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1135

Issue Publication:

1 / 012036

DOI:

https://doi.org/10.1088/1742-6596/1135/1/012036

Carbon-based aromatic-like nanostructures on the vicinal SiC surfaces induced by BA adsorption

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

8

Issue Publication:

6

Pages:

M53 - M59

DOI:

https://doi.org/10.1149/2.0031906jss

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

8

Issue Publication:

4

Pages:

X1

DOI:

https://doi.org/10.1149/2.0011906jss

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova

Name Publication:

Materials Physics and Mechanics

Volume Publication:

42

Issue Publication:

2

Pages:

178 - 182

DOI:

https://doi.org/10.18720/MPM.4222019_3

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Senkevich S.V. , Pronin I.P.

Name Publication:

Ferroelectrics

Volume Publication:

544

Issue Publication:

1

Pages:

33 - 37

DOI:

https://doi.org/10.1080/00150193.2019.1598181

A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A. , Kotlyar K.P. , Ubyivovk E.D. , Reznik R.R. , Cirlin G.E.

Name Publication:

CrystEngComm

Volume Publication:

21

Issue Publication:

32

Pages:

4707 - 4717

DOI:

https://doi.org/10.1039/c9ce00774a

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In

MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) subs

Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep

Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)

Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic S

Structural and elastoplastic properties of β - Ga 2O 3 films grown on hybrid SiC/Si substrates

MBE growth and optical properties of III-V nanowires on SiC/Si(111) hybrid substrate

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

MBE growth and properties of GaAs, AlGaAs and InAs nanowires on SiC/Si(111) hybrid substrate

Carbon-based aromatic-like nanostructures on the vicinal SiC surfaces induced by BA adsorption

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

Mechanism of molecule migration of carbon and silicon monoxides in silicon carbide crystal

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric

A new insight into the mechanism of low-temperature Au-assisted growth of InAs nanowires

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