![Kukushkin S.A. Kukushkin S.A.](/upload/000/u31/5/d/fa44d224.jpg)
Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter
MBE growth and Structural Properties of InAs and InGaAs Nanowires with Different Mole Fraction of In
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.
Name Publication:
Semiconductors
Volume Publication:
52
Issue Publication:
5
Pages:
651 - 653
MBE growth of thin AlGaAs nanowires with a complex structure on strongly mismatched SiC/Si(111) subs
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , Zeze D.A. , Cirlin G.E.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1038
Issue Publication:
1 / 012063
Effect of Chemical Treatment of a Silicon Surface on the Quality and Structure of Silicon-Carbide Ep
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kalinkin I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Semiconductors
Volume Publication:
52
Issue Publication:
6
Pages:
802 - 808
Mechanisms of epitaxial growth of SiC films by the method of atom substitution on the surfaces (100)
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
IOP Conference Series: Materials Science and Engineering
Volume Publication:
387
Issue Publication:
1 / 012044
Mechanism of Formation of Carbon–Vacancy Structures in Silicon Carbide during Its Growth by Atomic S
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physics of the Solid State
Volume Publication:
60
Issue Publication:
9
Pages:
1891 - 1896
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , c.o.p.a.m.s. Dr. Elena Osipova , Pechnikov A.I. , Soshnikov I.P.
Name Publication:
Continuum Mechanics and Thermodynamics
Volume Publication:
30
Issue Publication:
5
Pages:
1059 - 1068
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Nikitina E.V. , Cirlin G.E.
Name Publication:
Proceedings - International Conference Laser Optics 2018, ICLO 2018
Issue Publication:
/ 8435191
Pages:
382
A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Physics of the Solid State
Volume Publication:
60
Issue Publication:
10
Pages:
2066 - 2071
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Mechanics of Solids
Volume Publication:
53
Issue Publication:
5
Pages:
481 - 488
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , Kirilenko D.A. , Cirlin G.E.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1135
Issue Publication:
1 / 012036
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
6
Pages:
M53 - M59
Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
4
Pages:
X1
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Materials Physics and Mechanics
Volume Publication:
42
Issue Publication:
2
Pages:
178 - 182
New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Senkevich S.V. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
544
Issue Publication:
1
Pages:
33 - 37
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A. , Kotlyar K.P. , Ubyivovk E.D. , Reznik R.R. , Cirlin G.E.
Name Publication:
CrystEngComm
Volume Publication:
21
Issue Publication:
32
Pages:
4707 - 4717