Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kasatkin I.A. , Mikhailovskii V.Y. , Romanychev A.I.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

42

Issue Publication:

1

Pages:

30 - 39

DOI:

https://doi.org/10.18720/MPM.4212019_4

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R. , Soshnikov I. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Talalaev V. , Cirlin G.

Name Publication:

AIP Conference Proceedings

Volume Publication:

2064

Issue Publication:

/ 040004

DOI:

https://doi.org/10.1063/1.5087683

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dement’ev P.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

3

Pages:

201 - 204

DOI:

https://doi.org/10.1134/S1063785019030039

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Meth

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kotlyar K.P. , Likhachev A.I. , Nashchekin A.V. , Soshnikov I.P.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

299 - 306

DOI:

https://doi.org/10.1134/S1063783419030272

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Ca

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

288 - 291

DOI:

https://doi.org/10.1134/S1063783419030181

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substit

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

3

Pages:

456 - 463

DOI:

https://doi.org/10.1134/S1063783419030193

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A. , Sibirev N.V.

Name Publication:

Semiconductors

Volume Publication:

53

Issue Publication:

3

Pages:

350 - 360

DOI:

https://doi.org/10.1134/S1063782619030102

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Timoshnev S.N. , Bouravlev A.D. , Sobolev M.S.

Name Publication:

Semiconductors

Volume Publication:

53

Issue Publication:

2

Pages:

180 - 187

DOI:

https://doi.org/10.1134/S1063782619020143

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heter

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Shugurov K.Y. , Reznik R.R. , Mozharov A.M. , Kotlyar K.P. , Koval O.Y. , d.o.p.a.m.s. Osipov A.V. , Fedorov V.V. , Shtrom I.V. , Bolshakov A.D. , d.o.p.a.m.s. Kukushkin S.A. , Mukhin I.S. , Cirlin G.E.

Name Publication:

Materials Science in Semiconductor Processing

Volume Publication:

90

Pages:

20 - 25

DOI:

https://doi.org/10.1016/j.mssp.2018.09.024

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V. , Zubkova A. , Konenkova E. , Konenkov S. , d.o.p.a.m.s. Kukushkin S.A. , Orlova T. , Rodin S. , Rubets V. , Kibalov D. , Smirnov V.

Name Publication:

Physica Status Solidi (B) Basic Research

Volume Publication:

256

Issue Publication:

2 / 1800268

DOI:

https://doi.org/10.1002/pssb.201800268

Microstructure and electrical response of thin SiC films on Si substrates of p- and n-types

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Solnyshkin A.V. , Nekrasova G.M. , Senkevich S.V. , Pronin I.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Ferroelectrics

Volume Publication:

542

Issue Publication:

1

Pages:

52 - 57

DOI:

https://doi.org/10.1080/00150193.2019.1574662

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

7

Pages:

711 - 713

DOI:

https://doi.org/10.1134/S1063785019070277

Techniques for Polytypic Transformations in Silicon Carbide

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

8

Pages:

1389 - 1393

DOI:

https://doi.org/10.1134/S106378341908016X

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

11

Pages:

1075 - 1077

DOI:

https://doi.org/10.1134/S1063785019110026

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Timoshnev S.N. , Mizerov A.M. , Lapushkin M.N. , d.o.p.a.m.s. Kukushkin S.A. , Bouravleuv A.D.

Name Publication:

Semiconductors

Volume Publication:

53

Issue Publication:

14

Pages:

1935 - 1938

DOI:

https://doi.org/10.1134/S1063782619140239

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

Formation of ordered ZnO structures grown by the ALD method on hybrid SiC/Si (100) substrates

The use of SiC/Si hybrid substrate for MBE growth of thick GaN layers

A New Type of Carbon Nanostructure on a Vicinal SiС(111)-8° Surface

Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Meth

Microscopic Description of the Mechanism of Transition between the 2H and 4H Polytypes of Silicon Ca

Two-Stage Conversion of Silicon to Nanostructured Carbon by the Method of Coordinated Atomic Substit

On the Mechanism of the Vapor–Solid–Solid Growth of Au-Catalyzed GaAs Nanowires

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heter

Semipolar GaN(10–11) Epitaxial Layer Prepared on Nano-Patterned SiC/Si(100) Template

Microstructure and electrical response of thin SiC films on Si substrates of p- and n-types

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

Techniques for Polytypic Transformations in Silicon Carbide

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

Electronic Structure of SiN Layers on Si(111) and SiC/Si(111) Substrates

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