Kukushkin S.A. · Scientific work · Scientific publications — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Tumarkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Ankudinov A.S. , Odinets A.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

4

Pages:

815 - 819

DOI:

https://doi.org/10.1134/S1063783415040307

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rozhavskaya M.M. , Myasoedov A.V. , Troshkov S.I. , Lundin V.V. , Sorokin L.M. , Tsatsul’nikov A.F.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

9

Pages:

1899 - 1907

DOI:

https://doi.org/10.1134/S1063783415090218

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , c.o.p.a.m.s. Grashchenko A.S. , Konenkova E.V. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Rodin S.N. , Rubets V.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

10

Pages:

1966 - 1971

DOI:

https://doi.org/10.1134/S1063783415100042

Surface defects formation on strained thin films growing via chemical reaction: A model

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

643

Issue Publication:

1 / 012005

DOI:

https://doi.org/10.1088/1742-6596/643/1/012005

Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Feoktistov N.A. , Grudinkin S.A. , Golubev V.G. , Baranov M.A. , Bogdanov K.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

11

Pages:

2184 - 2190

DOI:

https://doi.org/10.1134/S1063783415110104

TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Myasoedov A.V. , Kalmykov A.E. , Kirilenko D.A. , Bessolov V.N. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Semiconductor Science and Technology

Volume Publication:

30

Issue Publication:

11 / 114002

DOI:

https://doi.org/10.1088/0268-1242/30/11/114002

Stability of the surface of an elastically strained multicomponent film in a system with chemical re

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

12

Pages:

2524 - 2531

DOI:

https://doi.org/10.1134/S106378341512029X

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surf

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Grudinkin S.A. , Golubev V.G. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

12

Pages:

2543 - 2549

DOI:

https://doi.org/10.1134/S1063783415120136

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

1

Pages:

1 - 16

Evolution of crystal morphology under flow of low-energy particles: Vacancy mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

1

Pages:

82 - 92

Nucleation of nanopores in glass optical fibers under influence of tensile stress: Experiment

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Santiago Nuñez I. , Shlyagin M.G. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

2

Pages:

125 - 132

Epitaxial growth of cadmium sulfide films on silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

3 / A028

Pages:

629 - 632

DOI:

https://doi.org/10.1134/S1063783416030033

Synchrotron-radiation photoemission study of the ultrathin Ba/3C-SiC(111) interface

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Benemanskaya G.V. , Dementev P.A. , Timoshnev S.N. , Senkovskiy B.

Name Publication:

Journal of Physics and Chemistry of Solids

Volume Publication:

90

Pages:

40 - 44

DOI:

https://doi.org/10.1016/j.jpcs.2015.10.018

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

4

Pages:

747 - 751

DOI:

https://doi.org/10.1134/S1063783416040120

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Karpov D.V. , Konenkova E.V. , Lipovskii A.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Thin Solid Films

Volume Publication:

606

Pages:

74 - 79

DOI:

https://doi.org/10.1016/j.tsf.2016.03.034

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitut

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

Surface defects formation on strained thin films growing via chemical reaction: A model

Evolution of the morphology of diamond particles and mechanism of their growth during the synthesis

TEM investigation of semipolar GaN layers grown on Si(001) offcut substrates

Stability of the surface of an elastically strained multicomponent film in a system with chemical re

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surf

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

Evolution of crystal morphology under flow of low-energy particles: Vacancy mechanism

Nucleation of nanopores in glass optical fibers under influence of tensile stress: Experiment

Epitaxial growth of cadmium sulfide films on silicon

Synchrotron-radiation photoemission study of the ultrathin Ba/3C-SiC(111) interface

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

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