![Kukushkin S.A. Kukushkin S.A.](/upload/000/u31/5/d/fa44d224.jpg)
Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physics of the Solid State
Volume Publication:
56
Issue Publication:
4
Pages:
792 - 800
A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
541
Issue Publication:
1 / 012003
Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , Rodin S.N. , d.o.p.a.m.s. Osipov A.V. , Shcheglov M.P.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
21
Issue Publication:
1
Pages:
71 - 77
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Technical Physics Letters
Volume Publication:
40
Issue Publication:
12
Pages:
1114 - 1116
The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , Zubkova A.V. , d.o.p.a.m.s. Osipov A.V. , Orlova T.A. , Rodin S.N. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
21
Issue Publication:
3
Pages:
266 - 274
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N.
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
38
Issue Publication:
1
Pages:
75 - 93
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Physics D: Applied Physics
Volume Publication:
47
Issue Publication:
31 / 313001
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Shcheglov M.P. , Feoktistov N.A.
Name Publication:
Technical Physics Letters
Volume Publication:
40
Issue Publication:
5
Pages:
386 - 388
Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crysta
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.
Name Publication:
Physics of the Solid State
Volume Publication:
56
Issue Publication:
8
Pages:
1507 - 1535
Morphological stability criterion for a spherical crystallization front in a multicomponent system w
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physics of the Solid State
Volume Publication:
56
Issue Publication:
12
Pages:
2530 - 2536
Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physics of the Solid State
Volume Publication:
57
Issue Publication:
1
Pages:
162 - 172
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Materials Physics and Mechanics
Volume Publication:
24
Issue Publication:
1
Pages:
35 - 40
Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitutio
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Senkovskiy B. , Timoshnev S.N.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
22
Issue Publication:
2
Pages:
183 - 190
SEM, dielectric, pyroelectric, and piezoelectric response of thin epitaxial AlN films grown on SiC/S
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Bogomolov A.A. , Solnyshkin A.V. , Komarov N.V. , d.o.p.a.m.s. Kukushkin S.A. , Krasovitsky D.M. , Dudin A.L. , Kiselev D.A. , Ksenich S.V. , Senkevich S.V. , Kaptelov E.Y. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
477
Issue Publication:
1
Pages:
121 - 130
The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of ato
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Technical Physics Letters
Volume Publication:
41
Issue Publication:
3
Pages:
259 - 262