Kukushkin S.A. · Scientific work · Scientific publications — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

First-order phase transition through an intermediate state

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

4

Pages:

792 - 800

DOI:

https://doi.org/10.1134/S1063783414040143

A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

541

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/541/1/012003

Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , Rodin S.N. , d.o.p.a.m.s. Osipov A.V. , Shcheglov M.P.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

21

Issue Publication:

1

Pages:

71 - 77

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

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Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

12

Pages:

1114 - 1116

DOI:

https://doi.org/10.1134/S1063785014120268

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , Zubkova A.V. , d.o.p.a.m.s. Osipov A.V. , Orlova T.A. , Rodin S.N. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

21

Issue Publication:

3

Pages:

266 - 274

Semipolar gallium nitride on silicon: Technology and properties

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

38

Issue Publication:

1

Pages:

75 - 93

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics D: Applied Physics

Volume Publication:

47

Issue Publication:

31 / 313001

DOI:

https://doi.org/10.1088/0022-3727/47/31/313001

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Shcheglov M.P. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

5

Pages:

386 - 388

DOI:

https://doi.org/10.1134/S1063785014050046

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crysta

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

8

Pages:

1507 - 1535

DOI:

https://doi.org/10.1134/S1063783414080137

Morphological stability criterion for a spherical crystallization front in a multicomponent system w

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

12

Pages:

2530 - 2536

DOI:

https://doi.org/10.1134/S106378341412018X

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

1

Pages:

162 - 172

DOI:

https://doi.org/10.1134/S106378341501031X

Microhardness study of two-layer nanostructures by a nanoindentation method

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

24

Issue Publication:

1

Pages:

35 - 40

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitutio

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Senkovskiy B. , Timoshnev S.N.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

22

Issue Publication:

2

Pages:

183 - 190

SEM, dielectric, pyroelectric, and piezoelectric response of thin epitaxial AlN films grown on SiC/S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Bogomolov A.A. , Solnyshkin A.V. , Komarov N.V. , d.o.p.a.m.s. Kukushkin S.A. , Krasovitsky D.M. , Dudin A.L. , Kiselev D.A. , Ksenich S.V. , Senkevich S.V. , Kaptelov E.Y. , Pronin I.P.

Name Publication:

Ferroelectrics

Volume Publication:

477

Issue Publication:

1

Pages:

121 - 130

DOI:

https://doi.org/10.1080/00150193.2015.1000144

The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of ato

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

41

Issue Publication:

3

Pages:

259 - 262

DOI:

https://doi.org/10.1134/S1063785015030244

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

First-order phase transition through an intermediate state

A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to

Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe

Semipolar gallium nitride on silicon: Technology and properties

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crysta

Morphological stability criterion for a spherical crystallization front in a multicomponent system w

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

Microhardness study of two-layer nanostructures by a nanoindentation method

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitutio

SEM, dielectric, pyroelectric, and piezoelectric response of thin epitaxial AlN films grown on SiC/S

The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of ato

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