Redkov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Low-Temperature Atmospheric Pressure Plasma-Enhanced CVD of Nanocomposite Coatings “Molybdenum Disul

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Alexandrov S.E. , Tyurikov K.S. , Kirilenko D.A. , c.o.p.a.m.s. Redkov A.V. , Lipovskii A.A.

Name Publication:

Advanced Materials Interfaces

Volume Publication:

4

Issue Publication:

18 / 1700241

DOI:

https://doi.org/10.1002/admi.201700241

GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Sharofidinov Sh.Sh. , c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032028

DOI:

https://doi.org/10.1088/1742-6596/917/3/032028

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Telyatnik R.S. , Timoshnev S.N.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032038

DOI:

https://doi.org/10.1088/1742-6596/917/3/032038

Self-Assembled Silver–Gold Nanoisland Films on Glass for SERS Applications

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Babich E. , c.o.p.a.m.s. Redkov A.V. , Reduto I. , Lipovskii A.

Name Publication:

Physica Status Solidi - Rapid Research Letters

Volume Publication:

12

Issue Publication:

1 / 1700226

DOI:

https://doi.org/10.1002/pssr.201700226

Heteroepitaxy growth of SiC on the substrates of Porous Si method of substitution of atoms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

Journal of Nano- and Electronic Physics

Volume Publication:

10

Issue Publication:

3 / 03026

DOI:

https://doi.org/10.21272/jnep.10(3).03026

Growth of sic films by the method of substitution of atoms on porous si (100) and (111) substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

36

Issue Publication:

1

Pages:

39 - 52

DOI:

https://doi.org/10.18720/MPM.3612018_4

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

7

Issue Publication:

4

Pages:

P158 - P160

DOI:

https://doi.org/10.1149/2.0061804jss

Nucleation of CdSe thin films: The kinetic model

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Koryakin A.A. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1124

Issue Publication:

2 / 022044

DOI:

https://doi.org/10.1088/1742-6596/1124/2/022044

Spiral growth of a crystal due to chemical reaction

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1124

Issue Publication:

2 / 022006

DOI:

https://doi.org/10.1088/1742-6596/1124/2/022006

The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

7

Issue Publication:

9

Pages:

P480 - P486

DOI:

https://doi.org/10.1149/2.0191809jss

A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , Fedotov S.D. , Statsenko V.N. , Sokolov E.M. , Timoshenkov S.P.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

57

Issue Publication:

1

Pages:

82 - 96

DOI:

https://doi.org/10.1515/rams-2018-0050

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Timoshnev S.N.

Name Publication:

Thin Solid Films

Volume Publication:

646

Pages:

158 - 162

DOI:

https://doi.org/10.1016/j.tsf.2017.11.037

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

60

Issue Publication:

10

Pages:

2066 - 2071

DOI:

https://doi.org/10.1134/S1063783418100116

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

53

Issue Publication:

5

Pages:

481 - 488

DOI:

https://doi.org/10.3103/S0025654418080010

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.

Name Publication:

ECS Journal of Solid State Science and Technology

Volume Publication:

8

Issue Publication:

4

Pages:

X1

DOI:

https://doi.org/10.1149/2.0011906jss

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Redkov A.V. - Leading Researcher - Structural and Phase Transformations in Condensed Matter

Low-Temperature Atmospheric Pressure Plasma-Enhanced CVD of Nanocomposite Coatings “Molybdenum Disul

GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

Effect of SiC buffer layer on GaN growth on Si via PA-MBE

Self-Assembled Silver–Gold Nanoisland Films on Glass for SERS Applications

Heteroepitaxy growth of SiC on the substrates of Porous Si method of substitution of atoms

Growth of sic films by the method of substitution of atoms on porous si (100) and (111) substrates

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

Nucleation of CdSe thin films: The kinetic model

Spiral growth of a crystal due to chemical reaction

The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at

A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

A New Trigonal (Rhombohedral) SiC Phase: Ab Initio Calculations, a Symmetry Analysis and the Raman S

Investigation of the Physicomechanical Characteristics of Nanoscale Films by Nanoindentation

Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut

Contacts