Redkov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Karpov D.V. , Konenkova E.V. , Lipovskii A.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Thin Solid Films

Volume Publication:

606

Pages:

74 - 79

DOI:

https://doi.org/10.1016/j.tsf.2016.03.034

Molecular dynamics simulation of the indentation of nanoscale films on a substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

42

Issue Publication:

6

Pages:

639 - 643

DOI:

https://doi.org/10.1134/S1063785016060274

Micro-Raman Spectroscopy Study of Glass-Ceramics with Gradient of Volume Fraction of Crystalline Pha

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , Lipovskii A.A. , Tagantsev D.K. , Groth B.

Name Publication:

Journal of the American Ceramic Society

Volume Publication:

99

Issue Publication:

8

Pages:

2558 - 2560

DOI:

https://doi.org/10.1111/jace.14368

Separation of stress-free AlN/SiC thin films from Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , Mukhin I.S. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

741

Issue Publication:

1 / 012034

DOI:

https://doi.org/10.1088/1742-6596/741/1/012034

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , A.M. Mizerov , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , S.N. Timoshnev

Name Publication:

Thin solid films

Issue Publication:

646

Pages:

158-162

DOI:

https://doi.org/10.1016/j.tsf.2017.11.037

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

V.V. Kidalov , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , A.S. Grashchenko , I.P. Soshnikov , M.E. Boiko , M.D. Sharkov , A.F. Dyadenchuk

Name Publication:

ECS journal of solid state science and technology

Issue Publication:

7

Pages:

158-160

DOI:

https://doi.org/10.1149/2.0061804jss

Self‐Assembled Silver–Gold Nanoisland Films on Glass for SERS Applications

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V., Babich, E., Reduto, I., Lipovskii, A.

Name Publication:

Physica status solidi (RRL)-Rapid Research Letter

Issue Publication:

12(1)

DOI:

https://doi.org/10.1002/pssr.201700226s

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Nikolai Bessonov , d.o.p.a.m.s. Osipov A.V., D.V. Karpov, E.V. Konenkova, A.А. Lipovskii, I.P. Soshnikov

Name Publication:

Thin Solid Films

Issue Publication:

606

Pages:

74-79

DOI:

https://doi.org/10.1016/j.tsf.2016.03.034

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

ГРАНТЫ РНФ

Number:

№14-12-01102

Theoretical study and numerical modeling of the mechanisms of growth of non-Kossel crystals and thin films

ГРАНТЫ ПРЕЗИДЕНТСКОЙ ПРОГРАММЫ

Number:

№21-72-00032

Development of theoretical methods for describing the growth and evolution of non-Kossel crystals and thin films

ГРАНТЫ ПРЕЗИДЕНТСКОЙ ПРОГРАММЫ

Number:

№19-72-00082

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Redkov A.V. - Leading Researcher - Structural and Phase Transformations in Condensed Matter

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Molecular dynamics simulation of the indentation of nanoscale films on a substrate

Micro-Raman Spectroscopy Study of Glass-Ceramics with Gradient of Volume Fraction of Crystalline Pha

Separation of stress-free AlN/SiC thin films from Si substrate

Plasma assisted molecular beam epitaxy of thin GaN films on Si(111) and SiC/Si(111) substrates: Effe

Properties of SiC films obtained by the method of substitution of atoms on porous silicon

Self‐Assembled Silver–Gold Nanoisland Films on Glass for SERS Applications

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

Epitaxy of silicon carbide films on silicon by the method of substitution of atoms to grow wide-bandgap semiconductors

Theoretical study and numerical modeling of the mechanisms of growth of non-Kossel crystals and thin films

Development of theoretical methods for describing the growth and evolution of non-Kossel crystals and thin films

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