Kukushkin S.A. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Growth of a multicomponent crystal via Chernov's mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012039

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012039

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012003

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012244

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012244

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric an

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sergeeva O.N. , Solnyshkin A.V. , Kiselev D.A. , Il’ina T.S. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Pronin I.P.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

12

Pages:

2386 - 2391

DOI:

https://doi.org/10.1134/S1063783419120485

Theory of phase transformations in the mechanics of solids and its applications for description of f

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Key Engineering Materials

Volume Publication:

528

Pages:

145 - 164

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.528.145

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Kalmykov A.E. , Myasoedov A.V. , Bessolov V.N. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

471

Issue Publication:

1 / 012033

DOI:

https://doi.org/10.1088/1742-6596/471/1/012033

HVPE growth of GaN in the semipolar direction on planar Si(210)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V. , Konenkova E. , Shcheglov M. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikolaev V.

Name Publication:

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume Publication:

10

Issue Publication:

3

Pages:

433 - 436

DOI:

https://doi.org/10.1002/pssc.201200566

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Applied Physics

Volume Publication:

113

Issue Publication:

2 / 024909

DOI:

https://doi.org/10.1063/1.4773343

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Vcherashnii D.B. , Obukhov S.A. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

5

Pages:

488 - 491

DOI:

https://doi.org/10.1134/S1063785013050234

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

3

Pages:

274 - 276

DOI:

https://doi.org/10.1134/S106378501303019X

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

48

Issue Publication:

2

Pages:

216 - 227

DOI:

https://doi.org/10.3103/S0025654413020143

Elastic interaction of point defects in crystals with cubic symmetry

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kuz'michev S.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

48

Issue Publication:

4

Pages:

431 - 438

DOI:

https://doi.org/10.3103/S0025654413040110

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Semiconductors

Volume Publication:

47

Issue Publication:

12

Pages:

1551 - 1555

DOI:

https://doi.org/10.1134/S1063782613120129

Epitaxial silicon carbide on a 6″ silicon wafer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Lukyanov A.V. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

1

Pages:

36 - 39

DOI:

https://doi.org/10.1134/S1063785014010088

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffract

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Ratnikov V.V. , Kalmykov A.E. , Myasoedov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Sorokin L.M.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

11

Pages:

994 - 997

DOI:

https://doi.org/10.1134/S1063785013110230

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter

Growth of a multicomponent crystal via Chernov's mechanism

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric an

Theory of phase transformations in the mechanics of solids and its applications for description of f

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride

HVPE growth of GaN in the semipolar direction on planar Si(210)

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction

Elastic interaction of point defects in crystals with cubic symmetry

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Epitaxial silicon carbide on a 6″ silicon wafer

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffract

Contacts