![Kukushkin S.A. Kukushkin S.A.](/upload/000/u31/5/d/fa44d224.jpg)
Kukushkin S.A. - Head of Department - Structural and Phase Transformations in Condensed Matter
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bessolov V.N. , Konenkova E.V. , Panteleev V.N.
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
4
Pages:
674 - 681
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , Kalinina E.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
5
Pages:
621 - 627
X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I.
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
5
Pages:
1014 - 1026
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physica B: Condensed Matter
Volume Publication:
512
Pages:
26 - 31
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V. , Kalmykov A. , Konenkov S. , Konenkova E. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A. , d.o.p.a.m.s. Osipov A.V. , Panteleev V.
Name Publication:
Microelectronic Engineering
Volume Publication:
178
Pages:
34 - 37
A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from s
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
6
Pages:
1238 - 1241
The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitutio
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Technical Physics Letters
Volume Publication:
43
Issue Publication:
7
Pages:
631 - 634
Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
872
Issue Publication:
1 / 012030
Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Rozhavskaya M.M. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Myasoedov A.V. , Troshkov S.I. , Sorokin L.M. , Brunkov P.N. , Baklanov A.V. , Telyatnik R.S. , Juluri R.R. , Pedersen K. , Popok V.N.
Name Publication:
Physica Status Solidi (A) Applications and Materials Science
Volume Publication:
214
Issue Publication:
10 / 1700190
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Cirlin G.E. , Reznik R.R. , Shtrom I.V. , Khrebtov A.I. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , Leandro L. , Kasama T. , Akopian N.
Name Publication:
Journal of Physics D: Applied Physics
Volume Publication:
50
Issue Publication:
48 / 484003
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Reznik R.R. , Kotlyar K.P. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
11
Pages:
1472 - 1476
Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitutio
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I.
Name Publication:
Superlattices and Microstructures
Volume Publication:
111
Pages:
899 - 911
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Journal of Physics D: Applied Physics
Volume Publication:
50
Issue Publication:
46 / 464006
IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon car
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Grudinkin S.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
12
Pages:
2430 - 2435
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032028