![Osipov A.V. Osipov A.V.](/upload/000/u40/6/b/0118acef.jpg)
Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter
Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Cry
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bagraev N.T. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanov V.V. , Klyachkin L.E. , Malyarenko A.M. , Khromov V.S.
Name Publication:
Semiconductors
Volume Publication:
55
Issue Publication:
2
Pages:
137 - 145
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Kandakov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Kotlyar K.P. , Ubyivovk E.V.
Name Publication:
Physics of the Solid State
Volume Publication:
63
Issue Publication:
3
Pages:
442 - 448
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Autors:
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1954
Issue Publication:
1 / 012009
Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infr
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Ilkiv I.V. , Kotlyar K.P. , Kirilenko D.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Mikushev S.V. , Dubrovskii V.G. , Cirlin G.E.
Name Publication:
ACS Applied Nano Materials
Volume Publication:
4
Issue Publication:
7
Pages:
7289 - 7294
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Autors:
Name Publication:
Surface and Coatings Technology
Volume Publication:
423
Issue Publication:
/ 127610
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Cherkashin N.A. , Sakharov A.V. , Nikolaev A.E. , Lundin V.V. , Usov S.O. , Ustinov V.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Tsatsul’nikov A.F.
Name Publication:
Technical Physics Letters
Volume Publication:
47
Issue Publication:
10
Pages:
753 - 756
Spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitu
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Materials
Volume Publication:
14
Issue Publication:
19 / 5579
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
2086
Issue Publication:
1 / 012012
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Name Publication:
Inorganic Materials
Volume Publication:
57
Issue Publication:
13
Pages:
1319 - 1339
Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical co
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
1
Pages:
28 - 33
Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) s
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
32
Issue Publication:
2
Pages:
108 - 116
Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P.
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
52
Issue Publication:
1-2
Pages:
29 - 42
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Physics of the Solid State
Volume Publication:
59
Issue Publication:
2
Pages:
399 - 402
Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su
НАУЧНЫЕ ПУБЛИКАЦИИ
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
3
Pages:
396 - 401
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Journal of Physics and Chemistry of Solids
Volume Publication:
102
Pages:
151 - 156