Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Cry

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bagraev N.T. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanov V.V. , Klyachkin L.E. , Malyarenko A.M. , Khromov V.S.

Name Publication:

Semiconductors

Volume Publication:

55

Issue Publication:

2

Pages:

137 - 145

DOI:

https://doi.org/10.1134/S106378262102007X

Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Kandakov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Kotlyar K.P. , Ubyivovk E.V.

Name Publication:

Physics of the Solid State

Volume Publication:

63

Issue Publication:

3

Pages:

442 - 448

DOI:

https://doi.org/10.1134/S1063783421030100

Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1954

Issue Publication:

1 / 012009

DOI:

https://doi.org/10.1088/1742-6596/1954/1/012009

Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infr

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Ilkiv I.V. , Kotlyar K.P. , Kirilenko D.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Mikushev S.V. , Dubrovskii V.G. , Cirlin G.E.

Name Publication:

ACS Applied Nano Materials

Volume Publication:

4

Issue Publication:

7

Pages:

7289 - 7294

DOI:

https://doi.org/10.1021/acsanm.1c01266

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Surface and Coatings Technology

Volume Publication:

423

Issue Publication:

/ 127610

DOI:

https://doi.org/10.1016/j.surfcoat.2021.127610

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Cherkashin N.A. , Sakharov A.V. , Nikolaev A.E. , Lundin V.V. , Usov S.O. , Ustinov V.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Tsatsul’nikov A.F.

Name Publication:

Technical Physics Letters

Volume Publication:

47

Issue Publication:

10

Pages:

753 - 756

DOI:

https://doi.org/10.1134/S106378502108006X

Spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitu

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials

Volume Publication:

14

Issue Publication:

19 / 5579

DOI:

https://doi.org/10.3390/ma14195579

Method for the modification of graphite subsurface layer to a solid mixture of SiC and graphite

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

2086

Issue Publication:

1 / 012012

DOI:

https://doi.org/10.1088/1742-6596/2086/1/012012

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Inorganic Materials

Volume Publication:

57

Issue Publication:

13

Pages:

1319 - 1339

DOI:

https://doi.org/10.1134/S0020168521130021

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical co

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kitaev Y.E. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

1

Pages:

28 - 33

DOI:

https://doi.org/10.1134/S1063783417010164

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) s

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

32

Issue Publication:

2

Pages:

108 - 116

DOI:

https://doi.org/10.18720/MPM.3222017-2

Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

52

Issue Publication:

1-2

Pages:

29 - 42

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

2

Pages:

399 - 402

DOI:

https://doi.org/10.1134/S1063783417020020

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Semiconductors

Volume Publication:

51

Issue Publication:

3

Pages:

396 - 401

DOI:

https://doi.org/10.1134/S1063782617030149

Nanoindentation of GaN/SiC thin films on silicon substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Journal of Physics and Chemistry of Solids

Volume Publication:

102

Pages:

151 - 156

DOI:

https://doi.org/10.1016/j.jpcs.2016.11.004

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Magnetic Properties of Thin Epitaxial SiC Layers Grown by the Atom-Substitution Method on Single-Cry

Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates

Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates

Formation of Hexagonal Ge Stripes on the Side Facets of AlGaAs Nanowires: Implications for Near-Infr

Formation of composite SiC-C coatings on graphite via annealing Si-melt in CO

Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates

Spin polarization and magnetic moment in silicon carbide grown by the method of coordinated substitu

Method for the modification of graphite subsurface layer to a solid mixture of SiC and graphite

Nanoscale Single-Crystal Silicon Carbide on Silicon and Unique Properties of This Material

Evolution of the symmetry of intermediate phases and their phonon spectra during the topochemical co

Carbon-based nanostructure created by Ba and Cs atomic layer deposition on the vicinal 3C-SiC(111) s

Growth of epitaxial SiC layer on Si (100) surface of n-and p-type of conductivity by the atoms subst

Epitaxial growth of cadmium telluride films on silicon with a buffer silicon carbide layer

Separation of III–N/SiC epitaxial heterostructure from a Si substrate and their transfer to other su

Nanoindentation of GaN/SiC thin films on silicon substrate

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