Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Egorov V.K. , Egorov E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

4

Pages:

773 - 779

DOI:

https://doi.org/10.1134/S1063783417040072

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bessolov V.N. , Konenkova E.V. , Panteleev V.N.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

4

Pages:

674 - 681

DOI:

https://doi.org/10.1134/S1063783417040114

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , Kalinina E.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Semiconductors

Volume Publication:

51

Issue Publication:

5

Pages:

621 - 627

DOI:

https://doi.org/10.1134/S1063782617050086

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

5

Pages:

1014 - 1026

DOI:

https://doi.org/10.1134/S1063783417050195

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physica B: Condensed Matter

Volume Publication:

512

Pages:

26 - 31

DOI:

https://doi.org/10.1016/j.physb.2017.02.018

Semipolar AlN on Si(100): Technology and properties

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V. , Kalmykov A. , Konenkov S. , Konenkova E. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A. , d.o.p.a.m.s. Osipov A.V. , Panteleev V.

Name Publication:

Microelectronic Engineering

Volume Publication:

178

Pages:

34 - 37

DOI:

https://doi.org/10.1016/j.mee.2017.04.047

A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from s

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

6

Pages:

1238 - 1241

DOI:

https://doi.org/10.1134/S1063783417060130

The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitutio

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

43

Issue Publication:

7

Pages:

631 - 634

DOI:

https://doi.org/10.1134/S1063785017070094

Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

872

Issue Publication:

1 / 012030

DOI:

https://doi.org/10.1088/1742-6596/872/1/012030

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Rozhavskaya M.M. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Myasoedov A.V. , Troshkov S.I. , Sorokin L.M. , Brunkov P.N. , Baklanov A.V. , Telyatnik R.S. , Juluri R.R. , Pedersen K. , Popok V.N.

Name Publication:

Physica Status Solidi (A) Applications and Materials Science

Volume Publication:

214

Issue Publication:

10 / 1700190

DOI:

https://doi.org/10.1002/pssa.201700190

MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Shtrom I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Cirlin G.E.

Name Publication:

Semiconductors

Volume Publication:

51

Issue Publication:

11

Pages:

1472 - 1476

DOI:

https://doi.org/10.1134/S1063782617110252

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitutio

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Nussupov K.K. , d.o.p.a.m.s. Osipov A.V. , Beisenkhanov N.B. , Bakranova D.I.

Name Publication:

Superlattices and Microstructures

Volume Publication:

111

Pages:

899 - 911

DOI:

https://doi.org/10.1016/j.spmi.2017.07.050

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics D: Applied Physics

Volume Publication:

50

Issue Publication:

46 / 464006

DOI:

https://doi.org/10.1088/1361-6463/aa8f69

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon car

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Grudinkin S.A. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

59

Issue Publication:

12

Pages:

2430 - 2435

DOI:

https://doi.org/10.1134/S1063783417120186

GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Sharofidinov Sh.Sh. , c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

917

Issue Publication:

3 / 032028

DOI:

https://doi.org/10.1088/1742-6596/917/3/032028

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Structural heteroepitaxy during topochemical transformation of silicon to silicon carbide

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution

X-ray reflectometry and simulation of the parameters of SiC epitaxial films on Si(111), grown by the

Drift mechanism of mass transfer on heterogeneous reaction in crystalline silicon substrate

Semipolar AlN on Si(100): Technology and properties

A quantum-mechanical model of dilatation dipoles in topochemical synthesis of silicon carbide from s

The Gorsky effect in the synthesis of silicon-carbide films from silicon by topochemical substitutio

Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitut

Metal organic vapor phase epitaxy growth of (Al)GaN heterostructures on SiC/Si(111) templates synthe

MBE growth of ultrathin III–V nanowires on a highly mismatched SiC/Si(111) substrate

Structural properties and parameters of epitaxial silicon carbide films, grown by atomic substitutio

Quantum mechanical theory of epitaxial transformation of silicon to silicon carbide

IR spectra of carbon-vacancy clusters in the topochemical transformation of silicon into silicon car

GaN growth via HVPE on SiC/Si substrates: Growth mechanisms

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