Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physi

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Kinetics and Catalysis

Volume Publication:

49

Issue Publication:

1

Pages:

79 - 91

DOI:

https://doi.org/10.1007/s10975-008-1010-9

Substrates for epitaxy of gallium nitride: New materials and techniques

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Bessolov V.N. , Medvedev B.K. , Nevolin V.K. , Tcarik K.A.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

17

Issue Publication:

1-2

Pages:

1 - 32

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Mezdrogina M.M. , Krivolapchuk V.V. , Feoktistov N.A. , Danilovskii É.Yu. , Kuzmin R.V. , Razumov S.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Semiconductors

Volume Publication:

42

Issue Publication:

7

Pages:

766 - 771

DOI:

https://doi.org/10.1134/S1063782608070038

New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

50

Issue Publication:

7

Pages:

1238 - 1245

DOI:

https://doi.org/10.1134/S1063783408070081

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Aksyanov I.G. , Bessolov V.N. , Zhilyaev Yu.V. , Kompan M.E. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.

Name Publication:

Technical Physics Letters

Volume Publication:

34

Issue Publication:

6

Pages:

479 - 482

DOI:

https://doi.org/10.1134/S1063785008060084

Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Veselov N.V. , Shcheglov M.P. , Kalmykov A.E. , Sitnikova A.A. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

34

Issue Publication:

11

Pages:

992 - 994

DOI:

https://doi.org/10.1134/S1063785008110278

Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric pro

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Pronin I.P. , Kaptelov E.Yu. , Senkevich S.V. , Klimov V.A. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

34

Issue Publication:

10

Pages:

838 - 840

DOI:

https://doi.org/10.1134/S1063785008100088

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epit

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kompan M.E. , Aksyanov I.G. , Kul'kova I.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

51

Issue Publication:

12

Pages:

2469 - 2473

DOI:

https://doi.org/10.1134/S1063783409120075

Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Wasyluk J. , Perova T.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A. , Grudinkin S.A.

Name Publication:

Materials Science Forum

Volume Publication:

645-648

Pages:

359 - 362

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.359

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy tec

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Zhilyaev Y.V. , Konenkova E.V. , Sorokin L.M. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. , d.o.p.a.m.s. Kukushkin S.A. , Mets L.I. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

36

Issue Publication:

6

Pages:

496 - 499

DOI:

https://doi.org/10.1134/S1063785010060039

Micro-raman mapping of 3C-SiC thin films grown by solid-gas phase epitaxy on Si (111)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Perova T.S. , Wasyluk J. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A. , Grudinkin S.A.

Name Publication:

Nanoscale Research Letters

Volume Publication:

5

Issue Publication:

9

Pages:

1507 - 1511

DOI:

https://doi.org/10.1007/s11671-010-9670-6

Influence of the external mechanical load on the formation of nanopores in an optical fiber under pu

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kuz'michev S.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shlyagin M.G.

Name Publication:

Physics of the Solid State

Volume Publication:

52

Issue Publication:

8

Pages:

1645 - 1652

DOI:

https://doi.org/10.1134/S1063783410080135

Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Kalmykov A.E. , Myasoedov A.V. , Veselov N.V. , Bessolov V.N. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

326

Issue Publication:

1 / 012015

DOI:

https://doi.org/10.1088/1742-6596/326/1/012015

Structural characterization of GaN epilayers on silicon: Effect of buffer layers

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Kalmykov A.E. , Bessolov V.N. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A. , Veselov N.V.

Name Publication:

Technical Physics Letters

Volume Publication:

37

Issue Publication:

4

Pages:

326 - 329

DOI:

https://doi.org/10.1134/S1063785011040158

Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Zhilyaev Yu.V. , Konenkova E.V. , Sorokin L.M. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. , d.o.p.a.m.s. Kukushkin S.A. , Mets L.I. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Optical Technology (A Translation of Opticheskii Zhurnal)

Volume Publication:

78

Issue Publication:

7

Pages:

435 - 439

DOI:

https://doi.org/10.1364/JOT.78.000435

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Phase transitions and the nucleation of catalytic nanostructures under the action of chemical, physi

Substrates for epitaxy of gallium nitride: New materials and techniques

Photoluminescence spectra of n-ZnO/p-GaN:(Er + Zn) and p-AlGaN:(Er + Zn) heterostructures

New method for growing silicon carbide on silicon by solid-phase epitaxy: Model and experiment

Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer

Electron-microscopic investigation of a SiC/Si(111) structure obtained by solid phase epitaxy

Thin-film PZT/SiC structure on silicon substrate: Formation, structural features, and dielectric pro

Luminescence spectra of hexagonal forms of silicon carbide in mosaic films grown by solid-state epit

Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si

Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy tec

Micro-raman mapping of 3C-SiC thin films grown by solid-gas phase epitaxy on Si (111)

Influence of the external mechanical load on the formation of nanopores in an optical fiber under pu

Structural characterization of GaN/AIN layers on 3C-SiC/Si(111) by TEM

Structural characterization of GaN epilayers on silicon: Effect of buffer layers

Aluminum and gallium nitrides on a silicon substrate with an intermediate silicon carbide nanolayer

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