Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

1

Pages:

162 - 172

DOI:

https://doi.org/10.1134/S106378341501031X

Microhardness study of two-layer nanostructures by a nanoindentation method

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

24

Issue Publication:

1

Pages:

35 - 40

Approach for electrochemical deposition of copper-graphite films and their mechanical properties

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.c.s. Konanov V.G. , Kurapova O.Yu. , Novik N.N. , Graschenko A.S. , d.o.p.a.m.s. Osipov A.V. , c.o.c.s. Ivan Archakov

Name Publication:

Materials Physics and Mechanics

Volume Publication:

24

Issue Publication:

1

Pages:

61 - 71

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitutio

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Senkovskiy B. , Timoshnev S.N.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

22

Issue Publication:

2

Pages:

183 - 190

The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of ato

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

41

Issue Publication:

3

Pages:

259 - 262

DOI:

https://doi.org/10.1134/S1063785015030244

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Tumarkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Ankudinov A.S. , Odinets A.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

4

Pages:

815 - 819

DOI:

https://doi.org/10.1134/S1063783415040307

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitut

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rozhavskaya M.M. , Myasoedov A.V. , Troshkov S.I. , Lundin V.V. , Sorokin L.M. , Tsatsul’nikov A.F.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

9

Pages:

1899 - 1907

DOI:

https://doi.org/10.1134/S1063783415090218

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , c.o.p.a.m.s. Grashchenko A.S. , Konenkova E.V. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Rodin S.N. , Rubets V.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

10

Pages:

1966 - 1971

DOI:

https://doi.org/10.1134/S1063783415100042

Stability of the surface of an elastically strained multicomponent film in a system with chemical re

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

12

Pages:

2524 - 2531

DOI:

https://doi.org/10.1134/S106378341512029X

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surf

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Grudinkin S.A. , Golubev V.G. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Physics of the Solid State

Volume Publication:

57

Issue Publication:

12

Pages:

2543 - 2549

DOI:

https://doi.org/10.1134/S1063783415120136

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Telyatnik R.S. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

1

Pages:

1 - 16

Evolution of crystal morphology under flow of low-energy particles: Vacancy mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

29

Issue Publication:

1

Pages:

82 - 92

Epitaxial growth of cadmium sulfide films on silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

3 / A028

Pages:

629 - 632

DOI:

https://doi.org/10.1134/S1063783416030033

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

4

Pages:

747 - 751

DOI:

https://doi.org/10.1134/S1063783416040120

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Karpov D.V. , Konenkova E.V. , Lipovskii A.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Thin Solid Films

Volume Publication:

606

Pages:

74 - 79

DOI:

https://doi.org/10.1016/j.tsf.2016.03.034

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Pore- and delamination-induced mismatch strain relaxation and conditions for the formation of disloc

Microhardness study of two-layer nanostructures by a nanoindentation method

Approach for electrochemical deposition of copper-graphite films and their mechanical properties

Photoemission study of nano SiC epitaxial layers synthesized by a new method of the atom substitutio

The equilibrium state in the Si-O-C ternary system during SiC growth by chemical substitution of ato

Role of elastic energy in the formation of ferroelectric barium strontium titanate films on sapphire

Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitut

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and str

Stability of the surface of an elastically strained multicomponent film in a system with chemical re

Infrared spectroscopy of silicon carbide layers synthesized by the substitution of atoms on the surf

AB initio modelling of nonlinear elastoplastic properties of diamond-like C, SiC, Si, Ge crystals up

Evolution of crystal morphology under flow of low-energy particles: Vacancy mechanism

Epitaxial growth of cadmium sulfide films on silicon

Phase equilibrium in the formation of silicon carbide by topochemical conversion of silicon

Pendeo-epitaxy of stress-free AlN layer on a profiled SiC/Si substrate

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