Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Elastic interaction of point defects in crystals with cubic symmetry

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Kuz'michev S.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

48

Issue Publication:

4

Pages:

431 - 438

DOI:

https://doi.org/10.3103/S0025654413040110

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Semiconductors

Volume Publication:

47

Issue Publication:

12

Pages:

1551 - 1555

DOI:

https://doi.org/10.1134/S1063782613120129

Epitaxial silicon carbide on a 6″ silicon wafer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Lukyanov A.V. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

1

Pages:

36 - 39

DOI:

https://doi.org/10.1134/S1063785014010088

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffract

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Ratnikov V.V. , Kalmykov A.E. , Myasoedov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Sorokin L.M.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

11

Pages:

994 - 997

DOI:

https://doi.org/10.1134/S1063785013110230

First-order phase transition through an intermediate state

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

4

Pages:

792 - 800

DOI:

https://doi.org/10.1134/S1063783414040143

A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

541

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/541/1/012003

Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , Rodin S.N. , d.o.p.a.m.s. Osipov A.V. , Shcheglov M.P.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

21

Issue Publication:

1

Pages:

71 - 77

Optimized approach for synthesis of nanotwinned copper with enhanced hardness

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.c.s. Konanov V.G. , Kurapova O.Yu. , Novik N.N. , Golubev S.N. , d.o.p.a.m.s. Osipov A.V. , Graschenko A.S. , Zhilyaev A.P. , Sergeev S.N. , c.o.c.s. Ivan Archakov

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

39

Issue Publication:

1

Pages:

1 - 8

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

12

Pages:

1114 - 1116

DOI:

https://doi.org/10.1134/S1063785014120268

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , Zubkova A.V. , d.o.p.a.m.s. Osipov A.V. , Orlova T.A. , Rodin S.N. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Materials Physics and Mechanics

Volume Publication:

21

Issue Publication:

3

Pages:

266 - 274

Semipolar gallium nitride on silicon: Technology and properties

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N.

Name Publication:

Reviews on Advanced Materials Science

Volume Publication:

38

Issue Publication:

1

Pages:

75 - 93

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics D: Applied Physics

Volume Publication:

47

Issue Publication:

31 / 313001

DOI:

https://doi.org/10.1088/0022-3727/47/31/313001

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Myasoedov A.V. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Shcheglov M.P. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

40

Issue Publication:

5

Pages:

386 - 388

DOI:

https://doi.org/10.1134/S1063785014050046

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crysta

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

8

Pages:

1507 - 1535

DOI:

https://doi.org/10.1134/S1063783414080137

Morphological stability criterion for a spherical crystallization front in a multicomponent system w

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

56

Issue Publication:

12

Pages:

2530 - 2536

DOI:

https://doi.org/10.1134/S106378341412018X

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Elastic interaction of point defects in crystals with cubic symmetry

Anisotropy of the solid-state epitaxy of silicon carbide in silicon

Epitaxial silicon carbide on a 6″ silicon wafer

Sequential structural characterization of layers in the GaN/AlN/SiC/Si(111) system by X-ray diffract

First-order phase transition through an intermediate state

A new method of replacement atoms for the synthesis of epitaxial layers of SiC on Si: From theory to

Semipolar GaN on SI(001): The role of SiC buffer layer synthesized by method of substrate atom subst

Optimized approach for synthesis of nanotwinned copper with enhanced hardness

Nanoindentation and deformation properties of nanoscale silicon carbide films on silicon substrate

The mechanism of formation of structural V-defects in polar and semipolar epitaxial GaN films synthe

Semipolar gallium nitride on silicon: Technology and properties

Theory and practice of SiC growth on Si and its applications to wide-gap semiconductor films

Epitaxy of semipolar GaN on a Si(001) substrate with a SiC buffer layer

Synthesis of epitaxial silicon carbide films through the substitution of atoms in the silicon crysta

Morphological stability criterion for a spherical crystallization front in a multicomponent system w

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