Osipov A.V. · Scientific work · Scientific publications — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R. , Kotlyar K. , Ilkiv I. , Soshnikov I. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E. , Cirlin G.

Name Publication:

AIP Conference Proceedings

Volume Publication:

1748

Issue Publication:

/ 040003

DOI:

https://doi.org/10.1063/1.4954355

Molecular dynamics simulation of the indentation of nanoscale films on a substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Technical Physics Letters

Volume Publication:

42

Issue Publication:

6

Pages:

639 - 643

DOI:

https://doi.org/10.1134/S1063785016060274

Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Romanychev A.I.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

7

Pages:

1448 - 1452

DOI:

https://doi.org/10.1134/S1063783416070246

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Ilkiv I.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Soshnikov I.P. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Proceedings - 2016 International Conference Laser Optics, LO 2016

Issue Publication:

/ 7549902

Pages:

R92

DOI:

https://doi.org/10.1109/LO.2016.7549902

Separation of stress-free AlN/SiC thin films from Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , Mukhin I.S. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

741

Issue Publication:

1 / 012034

DOI:

https://doi.org/10.1088/1742-6596/741/1/012034

The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Ilkiv I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

741

Issue Publication:

1 / 012027

DOI:

https://doi.org/10.1088/1742-6596/741/1/012027

Epitaxial gallium oxide on a SiC/Si substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Pechnikov A.I. , Feoktistov N.A.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

9

Pages:

1876 - 1881

DOI:

https://doi.org/10.1134/S1063783416090201

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrat

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Reznik R.R. , Kotlyar K.P. , Il’kiv I.V. , Soshnikov I.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Cirlin G.E.

Name Publication:

Physics of the Solid State

Volume Publication:

58

Issue Publication:

10

Pages:

1952 - 1955

DOI:

https://doi.org/10.1134/S1063783416100292

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(1

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Senkovskiy B.V.

Name Publication:

Semiconductors

Volume Publication:

50

Issue Publication:

10

Pages:

1327 - 1332

DOI:

https://doi.org/10.1134/S1063782616100080

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Benemanskaya G.V. , Dementev P.A. , d.o.p.a.m.s. Kukushkin S.A. , Lapushkin M.N. , d.o.p.a.m.s. Osipov A.V. , Timoshnev S.N.

Name Publication:

Technical Physics Letters

Volume Publication:

42

Issue Publication:

12

Pages:

1145 - 1148

DOI:

https://doi.org/10.1134/S1063785016120026

Kinetics of laser-induced oxidation of silicon near room temperature

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Osipov A.V. , Patzner P. , Hess P.

Name Publication:

Applied Physics A: Materials Science and Processing

Volume Publication:

82

Issue Publication:

2

Pages:

275 - 280

DOI:

https://doi.org/10.1007/s00339-005-3415-x

Optical and electrical properties of thin carbide-containing films on silicon

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Belyaev A.P. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rubets V.P. , Gordeev S.K. , Korchagina S.B.

Name Publication:

Technical Physics Letters

Volume Publication:

32

Issue Publication:

5

Pages:

414 - 416

DOI:

https://doi.org/10.1134/S1063785006050142

Formation of pores in the optical fiber exposed to intense pulsed UV radiation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Shlyagin M.G.

Name Publication:

Technical Physics

Volume Publication:

51

Issue Publication:

8

Pages:

1035 - 1045

DOI:

https://doi.org/10.1134/S1063784206080135

Photoinduced self-limited low-temperature growth of ultra-thin silicon-oxide films with water vapor

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Patzner P. , d.o.p.a.m.s. Osipov A.V. , Hess P.

Name Publication:

Applied Physics A: Materials Science and Processing

Volume Publication:

85

Issue Publication:

2

Pages:

145 - 150

DOI:

https://doi.org/10.1007/s00339-006-3683-0

Type IIA photosensitivity and formation of pores in optical fibers under intense ultraviolet irradia

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Shlyagin M.G. , Swart P.L. , Chtcherbakov A.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Applied Physics

Volume Publication:

102

Issue Publication:

5 / 053502

DOI:

https://doi.org/10.1063/1.2773996

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

Molecular dynamics simulation of the indentation of nanoscale films on a substrate

Epitaxial growth of zinc oxide by the method of atomic layer deposition on SiC/Si substrates

MBE growth and optical properties of GaN nanowires on SiC/Si(111) hybrid substrate

Separation of stress-free AlN/SiC thin films from Si substrate

The use of SiC/Si(111) hybrid substrate for MBE growth of GaN nanowires

Epitaxial gallium oxide on a SiC/Si substrate

Growth and optical properties of filamentary GaN nanocrystals grown on a hybrid SiC/Si(111) substrat

The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(1

Photoemission studies of the vicinal SiC(100) 4° surface and the Cs/SiC(100) 4° interface

Kinetics of laser-induced oxidation of silicon near room temperature

Optical and electrical properties of thin carbide-containing films on silicon

Formation of pores in the optical fiber exposed to intense pulsed UV radiation

Photoinduced self-limited low-temperature growth of ultra-thin silicon-oxide films with water vapor

Type IIA photosensitivity and formation of pores in optical fibers under intense ultraviolet irradia

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