Grashchenko A.S. - Senior Researcher - Structural and Phase Transformations in Condensed Matter
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.c.s. Konanov V.G. , Kurapova O.Yu. , c.o.p.a.m.s. Grashchenko A.S. , Golubev S.N. , Solovyeva E.N. , c.o.c.s. Ivan Archakov
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
51
Issue Publication:
2
Pages:
160 - 176
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Journal of Physics and Chemistry of Solids
Volume Publication:
102
Pages:
151 - 156
Photoelectric characteristics of silicon carbide–silicon structures grown by the atomic substitution
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , d.o.p.a.m.s. Osipov A.V. , Kalinina E.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Semiconductors
Volume Publication:
51
Issue Publication:
5
Pages:
621 - 627
Dependencies of photoelectric properties of SiC/Si structures grown by the method of atoms substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Feoktistov N.A.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
872
Issue Publication:
1 / 012030
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
Journal of Nano- and Electronic Physics
Volume Publication:
10
Issue Publication:
3 / 03026
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
Materials Physics and Mechanics
Volume Publication:
36
Issue Publication:
1
Pages:
39 - 52
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Kidalov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Boiko M.E. , Sharkov M.D. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
4
Pages:
P158 - P160
The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
9
Pages:
P480 - P486
A new method for synthesis of epitaxial films of silicon carbide on sapphire substrates (-Al 2 O 3 )
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Feoktistov N.A. , Fedotov S.D. , Statsenko V.N. , Sokolov E.M. , Timoshenkov S.P.
Name Publication:
Reviews on Advanced Materials Science
Volume Publication:
57
Issue Publication:
1
Pages:
82 - 96
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Soshnikov I.P.
Name Publication:
Physics of the Solid State
Volume Publication:
60
Issue Publication:
5
Pages:
852 - 857
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , c.o.p.a.m.s. Dr. Elena Osipova , Pechnikov A.I. , Soshnikov I.P.
Name Publication:
Continuum Mechanics and Thermodynamics
Volume Publication:
30
Issue Publication:
5
Pages:
1059 - 1068
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Name Publication:
Mechanics of Solids
Volume Publication:
53
Issue Publication:
5
Pages:
481 - 488
Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
4
Pages:
X1
Studying Evolution of the Ensemble of Micropores in a SiC/Si Structure during Its Growth by the Meth
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Kotlyar K.P. , Likhachev A.I. , Nashchekin A.V. , Soshnikov I.P.
Name Publication:
Physics of the Solid State
Volume Publication:
61
Issue Publication:
3
Pages:
299 - 306
Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Timoshnev S.N. , Bouravlev A.D. , Sobolev M.S.
Name Publication:
Semiconductors
Volume Publication:
53
Issue Publication:
2
Pages:
180 - 187