Osipov A.V. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , Mizerov A.M. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V. , Nikitina E.V. , Timoshnev S.N. , Bouravlev A.D. , Sobolev M.S.

Name Publication:

Semiconductors

Volume Publication:

53

Issue Publication:

2

Pages:

180 - 187

DOI:

https://doi.org/10.1134/S1063782619020143

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heter

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Shugurov K.Y. , Reznik R.R. , Mozharov A.M. , Kotlyar K.P. , Koval O.Y. , d.o.p.a.m.s. Osipov A.V. , Fedorov V.V. , Shtrom I.V. , Bolshakov A.D. , d.o.p.a.m.s. Kukushkin S.A. , Mukhin I.S. , Cirlin G.E.

Name Publication:

Materials Science in Semiconductor Processing

Volume Publication:

90

Pages:

20 - 25

DOI:

https://doi.org/10.1016/j.mssp.2018.09.024

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

7

Pages:

711 - 713

DOI:

https://doi.org/10.1134/S1063785019070277

Techniques for Polytypic Transformations in Silicon Carbide

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Physics of the Solid State

Volume Publication:

61

Issue Publication:

8

Pages:

1389 - 1393

DOI:

https://doi.org/10.1134/S106378341908016X

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Antipov V.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Technical Physics Letters

Volume Publication:

45

Issue Publication:

11

Pages:

1075 - 1077

DOI:

https://doi.org/10.1134/S1063785019110026

Growth of a multicomponent crystal via Chernov's mechanism

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012039

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012039

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012003

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012003

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

1410

Issue Publication:

1 / 012244

DOI:

https://doi.org/10.1088/1742-6596/1410/1/012244

Theory of phase transformations in the mechanics of solids and its applications for description of f

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Key Engineering Materials

Volume Publication:

528

Pages:

145 - 164

DOI:

https://doi.org/10.4028/www.scientific.net/KEM.528.145

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Sorokin L.M. , Kalmykov A.E. , Myasoedov A.V. , Bessolov V.N. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.

Name Publication:

Journal of Physics: Conference Series

Volume Publication:

471

Issue Publication:

1 / 012033

DOI:

https://doi.org/10.1088/1742-6596/471/1/012033

HVPE growth of GaN in the semipolar direction on planar Si(210)

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V. , Konenkova E. , Shcheglov M. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikolaev V.

Name Publication:

Physica Status Solidi (C) Current Topics in Solid State Physics

Volume Publication:

10

Issue Publication:

3

Pages:

433 - 436

DOI:

https://doi.org/10.1002/pssc.201200566

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Journal of Applied Physics

Volume Publication:

113

Issue Publication:

2 / 024909

DOI:

https://doi.org/10.1063/1.4773343

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Vcherashnii D.B. , Obukhov S.A. , Feoktistov N.A.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

5

Pages:

488 - 491

DOI:

https://doi.org/10.1134/S1063785013050234

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.

Name Publication:

Technical Physics Letters

Volume Publication:

39

Issue Publication:

3

Pages:

274 - 276

DOI:

https://doi.org/10.1134/S106378501303019X

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction

НАУЧНЫЕ ПУБЛИКАЦИИ

Autors:

d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V.

Name Publication:

Mechanics of Solids

Volume Publication:

48

Issue Publication:

2

Pages:

216 - 227

DOI:

https://doi.org/10.3103/S0025654413020143

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Osipov A.V. - Principal Researcher - Structural and Phase Transformations in Condensed Matter

Photoelectric Properties of GaN Layers Grown by Plasma-Assisted Molecular-Beam Epitaxy on Si(111) Su

Study of SiC buffer layer thickness influence on photovoltaic properties of n-GaN NWs/SiC/p-Si heter

Growing III–V Semiconductor Heterostructures on SiC/Si Substrates

Techniques for Polytypic Transformations in Silicon Carbide

Epitaxial Growth of Zinc Sulfide by Atomic Layer Deposition on SiC/Si Hybrid Substrates

Growth of a multicomponent crystal via Chernov's mechanism

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Strength and structural properties of AlN films grown on SiC/Si substrates synthesized by atomic sub

Theory of phase transformations in the mechanics of solids and its applications for description of f

Transmission electron microscopy study of semi-polar gallium nitride layer grown by hydride-chloride

HVPE growth of GaN in the semipolar direction on planar Si(210)

A new method for the synthesis of epitaxial layers of silicon carbide on silicon owing to formation

Carrier mobility in undoped SiC layers grown on silicon by a new epitaxial technique

Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate

A new mechanism of elastic energy relaxation in heteroepitaxy of monocrystalline films: Interaction

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