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 Sharofidinov Sh.Sh. · Scientific work — Институт Проблем Машиноведения РАН ( ИПМаш РАН )
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Институт Проблем Машиноведения РАН ( ИПМаш РАН ) Институт Проблем Машиноведения РАН ( ИПМаш РАН )

Institute for Problems in Mechanical Engineering
of the Russian Academy of Sciences

Institute for Problems in Mechanical Engineering of the Russian Academy of Sciences
  2. Employees
  3. Sharofidinov Sh.Sh.
Sharofidinov Sh.Sh.

Sharofidinov Sh.Sh. - Senior Researcher - Structural and Phase Transformations in Condensed Matter

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Epitaxial Growth of Bulk Semipolar AlN Films on Si(001) and Hybrid SiC/Si(001) Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
6
Pages:
539 - 542
DOI:
https://doi.org/10.1134/S106378502006005X
Dielectric and polar properties of aluminum nitride single crystals
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kazarova O.P. , Mohov E.N. , Yu. Kaptelov E. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
576
Issue Publication:
1
Pages:
55 - 61
DOI:
https://doi.org/10.1080/00150193.2021.1888260
Self-Organization of the Composition of AlxGa1 –xN Films Grown on Hybrid SiC/Si Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Kandakov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Kotlyar K.P. , Ubyivovk E.V.
Name Publication:
Physics of the Solid State
Volume Publication:
63
Issue Publication:
3
Pages:
442 - 448
DOI:
https://doi.org/10.1134/S1063783421030100
Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Solnyshkin A.V. , Sergeeva O.N. , Shustova O.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Staritsyn M.V. , Kaptelov E.Y. , d.o.p.a.m.s. Kukushkin S.A. , Pronin I.P.
Name Publication:
Technical Physics Letters
Volume Publication:
47
Issue Publication:
6
Pages:
466 - 469
DOI:
https://doi.org/10.1134/S1063785021050138
Nanoindentation of AlN, GaN, and AlGaN films grown by HVPE on SiC/Si hybrid substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1954
Issue Publication:
1 / 012009
DOI:
https://doi.org/10.1088/1742-6596/1954/1/012009
GaN growth via HVPE on SiC/Si substrates: Growth mechanisms
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Sharofidinov Sh.Sh. , c.o.p.a.m.s. Redkov A.V. , d.o.p.a.m.s. Osipov A.V. , d.o.p.a.m.s. Kukushkin S.A.
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032028
DOI:
https://doi.org/10.1088/1742-6596/917/3/032028
The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
9
Pages:
P480 - P486
DOI:
https://doi.org/10.1149/2.0191809jss
Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
4
Pages:
X1
DOI:
https://doi.org/10.1149/2.0011906jss
New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Senkevich S.V. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
544
Issue Publication:
1
Pages:
33 - 37
DOI:
https://doi.org/10.1080/00150193.2019.1598181
Growing III–V Semiconductor Heterostructures on SiC/Si Substrates
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Redkov A.V. , c.o.p.a.m.s. Grashchenko A.S. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
45
Issue Publication:
7
Pages:
711 - 713
DOI:
https://doi.org/10.1134/S1063785019070277
Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric an
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , Kiselev D.A. , Il’ina T.S. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Pronin I.P.
Name Publication:
Physics of the Solid State
Volume Publication:
61
Issue Publication:
12
Pages:
2386 - 2391
DOI:
https://doi.org/10.1134/S1063783419120485
HVPE growth of GaN in the semipolar direction on planar Si(210)
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V. , Konenkova E. , Shcheglov M. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikolaev V.
Name Publication:
Physica Status Solidi (C) Current Topics in Solid State Physics
Volume Publication:
10
Issue Publication:
3
Pages:
433 - 436
DOI:
https://doi.org/10.1002/pssc.201200566
Epitaxy of gallium nitride in semi-polar direction on Si(210) substrate
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.
Name Publication:
Technical Physics Letters
Volume Publication:
39
Issue Publication:
3
Pages:
274 - 276
DOI:
https://doi.org/10.1134/S106378501303019X
Chloride vapor-phase epitaxy of gallium nitride on silicon: Effect of a silicon carbide interlayer
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Aksyanov I.G. , Bessolov V.N. , Zhilyaev Yu.V. , Kompan M.E. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.
Name Publication:
Technical Physics Letters
Volume Publication:
34
Issue Publication:
6
Pages:
479 - 482
DOI:
https://doi.org/10.1134/S1063785008060084
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy tec
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Zhilyaev Y.V. , Konenkova E.V. , Sorokin L.M. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. , d.o.p.a.m.s. Kukushkin S.A. , Mets L.I. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
36
Issue Publication:
6
Pages:
496 - 499
DOI:
https://doi.org/10.1134/S1063785010060039
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