Sharofidinov Sh.Sh. - Senior Researcher - Structural and Phase Transformations in Condensed Matter
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Autors:
Name Publication:
Technical Physics Letters
Volume Publication:
46
Issue Publication:
6
Pages:
539 - 542
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kazarova O.P. , Mohov E.N. , Yu. Kaptelov E. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
576
Issue Publication:
1
Pages:
55 - 61
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Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Grashchenko A.S. , Kandakov A.V. , c.o.p.a.m.s. Dr. Elena Osipova , Kotlyar K.P. , Ubyivovk E.V.
Name Publication:
Physics of the Solid State
Volume Publication:
63
Issue Publication:
3
Pages:
442 - 448
Dielectric and Pyroelectric Properties of Composites Based on Aluminum and Gallium Nitrides Grown by
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Solnyshkin A.V. , Sergeeva O.N. , Shustova O.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Staritsyn M.V. , Kaptelov E.Y. , d.o.p.a.m.s. Kukushkin S.A. , Pronin I.P.
Name Publication:
Technical Physics Letters
Volume Publication:
47
Issue Publication:
6
Pages:
466 - 469
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Autors:
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
1954
Issue Publication:
1 / 012009
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Autors:
Name Publication:
Journal of Physics: Conference Series
Volume Publication:
917
Issue Publication:
3 / 032028
The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitution of at
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dydenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
7
Issue Publication:
9
Pages:
P480 - P486
Erratum: The mechanism of growth of GaN films by the HVPE method on SiC synthesized by the substitut
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Redkov A.V. , Kidalov V.V. , c.o.p.a.m.s. Grashchenko A.S. , Soshnikov I.P. , Dyadenchuk A.F.
Name Publication:
ECS Journal of Solid State Science and Technology
Volume Publication:
8
Issue Publication:
4
Pages:
X1
New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Senkevich S.V. , Pronin I.P.
Name Publication:
Ferroelectrics
Volume Publication:
544
Issue Publication:
1
Pages:
33 - 37
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Autors:
Name Publication:
Technical Physics Letters
Volume Publication:
45
Issue Publication:
7
Pages:
711 - 713
Influence of Orientation of a Silicon Substrate with a Buffer Silicon Carbide Layer on Dielectric an
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Sergeeva O.N. , Solnyshkin A.V. , Kiselev D.A. , Il’ina T.S. , d.o.p.a.m.s. Kukushkin S.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Kaptelov E.Y. , Pronin I.P.
Name Publication:
Physics of the Solid State
Volume Publication:
61
Issue Publication:
12
Pages:
2386 - 2391
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V. , Konenkova E. , Shcheglov M. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Nikolaev V.
Name Publication:
Physica Status Solidi (C) Current Topics in Solid State Physics
Volume Publication:
10
Issue Publication:
3
Pages:
433 - 436
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , Nikolaev V.I. , d.o.p.a.m.s. Osipov A.V. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.
Name Publication:
Technical Physics Letters
Volume Publication:
39
Issue Publication:
3
Pages:
274 - 276
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Aksyanov I.G. , Bessolov V.N. , Zhilyaev Yu.V. , Kompan M.E. , Konenkova E.V. , d.o.p.a.m.s. Kukushkin S.A. , d.o.p.a.m.s. Osipov A.V. , Rodin S.N. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P.
Name Publication:
Technical Physics Letters
Volume Publication:
34
Issue Publication:
6
Pages:
479 - 482
Aluminum nitride on silicon: Role of silicon carbide interlayer and chloride vapor-phase epitaxy tec
НАУЧНЫЕ ПУБЛИКАЦИИ
Autors:
Bessolov V.N. , Zhilyaev Y.V. , Konenkova E.V. , Sorokin L.M. , Feoktistov N.A. , c.o.p.a.m.s. Sharofidinov Sh.Sh. , Shcheglov M.P. , d.o.p.a.m.s. Kukushkin S.A. , Mets L.I. , d.o.p.a.m.s. Osipov A.V.
Name Publication:
Technical Physics Letters
Volume Publication:
36
Issue Publication:
6
Pages:
496 - 499